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STD13003T4

STMicroelectronics

STD13003T4 by STMicroelectronics

STD13003T4 by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications with max. power dissipation of 20W. It has a single configuration, operates at up to 150°C, and can handle a max. collector current of 1.5A in a small outline package suitable for surface mount technology.

Median Price

$0.718

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 74,323 parts In-Stock

1+ parts

$0.217

100+ parts

-

1k+ parts

-

10k+ parts

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74,323

$0.217

-

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Mouser Electronics

USA . 1,613 parts In-Stock

1+ parts

$1.220

100+ parts

$0.463

1k+ parts

$0.336

10k+ parts

$0.263

1,613

$1.220

$0.463

$0.336

$0.263

DigiKey

USA . 1,466 parts In-Stock

1+ parts

$1.220

100+ parts

$0.503

1k+ parts

$0.355

10k+ parts

$0.279

1,466

$1.220

$0.503

$0.355

$0.279

Chip1Stop

Japan . 74,333 parts In-Stock

1+ parts

-

100+ parts

-

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74,333

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-

-

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Verical

USA . 74,323 parts In-Stock

1+ parts

-

100+ parts

$0.217

1k+ parts

-

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74,323

-

$0.217

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,334 parts In-Stock

1+ parts

$0.204

100+ parts

-

1k+ parts

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3,334

$0.204

-

-

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Vyrian

USA . 1,053 parts In-Stock

1+ parts

$0.215

100+ parts

-

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1,053

$0.215

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Elcom Components

USA . 2,123 parts In-Stock

1+ parts

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2,123

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Anansix

USA . 1,785 parts In-Stock

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1,785

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Distributors (Availability)

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Corphita

USA . 4,055 parts In-Stock

1+ parts

$0.194

100+ parts

-

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4,055

$0.194

-

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IDEA Electronic Components Group

UK . 270 parts In-Stock

1+ parts

$0.307

100+ parts

-

1k+ parts

$0.277

10k+ parts

-

270

$0.307

-

$0.277

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MKK Technologies

India . 978 parts In-Stock

1+ parts

$0.578

100+ parts

-

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978

$0.578

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DigiPath Technology Company

USA . 978 parts In-Stock

1+ parts

$0.578

100+ parts

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978

$0.578

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Advanced Electronics

New Zealand . 15 parts In-Stock

1+ parts

$2.085

100+ parts

$1.897

1k+ parts

$1.710

10k+ parts

-

15

$2.085

$1.897

$1.710

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Kepictronics

USA . 64,332 parts In-Stock

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64,332

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Perfect Parts

USA . 13,341 parts In-Stock

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13,341

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 2,082 parts In-Stock

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2,082

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Parana Technologies

USA . 1,817 parts In-Stock

1+ parts

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$0.367

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1,817

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$0.367

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A-Z Elektronik GmbH

Germany . 1,749 parts In-Stock

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1,749

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Overview

Experience the power of reliable technology with the STD13003T4 by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics ensures top-notch quality and performance in their Power Bipolar Junction Transistors (BJT). Ideal for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 400V and a maximum collector current of 1.5A. With a small outline package style and gull wing terminal form, this transistor is perfect for compact designs. Trust in STMicroelectronics to provide you with a high-quality product that delivers exceptional value and efficiency for all your electronic projects. Choose the STD13003T4 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high efficiency and low noise.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Enables easy and convenient mounting on circuit boards, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

Allows for efficient placement and orientation on the circuit board, optimizing the use of available space.

No. of Terminals: 2

Simplifies connection and integration into circuit designs, making it suitable for straightforward applications.

Maximum Power Dissipation (Abs): 20 W

Handles high power levels effectively, ensuring reliable operation in demanding conditions.

Package Style (Meter): SMALL OUTLINE

Compact size and footprint make it suitable for space-constrained applications and allow for efficient circuit layout.

Minimum DC Current Gain (hFE): 5

Ensures reliable amplification and switching performance, providing consistent and predictable operation.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, making it suitable for a wide range of applications.

Maximum Collector-Emitter Voltage: 400 V

Handles high voltages with ease, making it suitable for applications requiring high voltage switching or amplification.

Transistor Element Material: SILICON

Provides high performance and reliability, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 1.5 A

Handles moderate current levels effectively, suitable for various switching and amplification applications.

Terminal Finish: Matte Tin (Sn)

Provides good electrical conductivity and corrosion resistance, ensuring stable and reliable connections.

Terminal Position: SINGLE

Simplifies connection and installation, making it easy to integrate into circuit designs.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STD13003T4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STD13003T4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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