Loading...

STD13003

STMicroelectronics

STD13003 by STMicroelectronics

STD13003 by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400V, a min DC current gain (hFE) of 5, and operates up to 150 °C. Its compact SO package makes it ideal for space-constrained designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,982 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,982

-

-

-

-

Digiode

USA . 1,332 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,332

-

-

-

-

Anansix

USA . 930 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

930

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 56 parts In-Stock

1+ parts

$0.966

100+ parts

-

1k+ parts

$0.869

10k+ parts

-

56

$0.966

-

$0.869

-

MKK Technologies

India . 1,032 parts In-Stock

1+ parts

$1.816

100+ parts

-

1k+ parts

-

10k+ parts

-

1,032

$1.816

-

-

-

DigiPath Technology Company

USA . 1,032 parts In-Stock

1+ parts

$1.816

100+ parts

-

1k+ parts

-

10k+ parts

-

1,032

$1.816

-

-

-

Kepictronics

USA . 13,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,000

-

-

-

-

Corphita

USA . 3,498 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,498

-

-

-

-

Parana Technologies

USA . 489 parts In-Stock

1+ parts

-

100+ parts

$1.155

1k+ parts

-

10k+ parts

-

489

-

$1.155

-

-

Overview

Elevate your projects with the STD13003 from STMicroelectronics, where quality meets innovative design. This NPN power BJT is perfect for efficient switching applications, ensuring reliability even in demanding environments. As a trusted leader in semiconductor solutions, STMicroelectronics guarantees exceptional performance and durability. With its compact size and robust features, the STD13003 empowers engineers to create cutting-edge electronics that stand out in any application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures a lightweight and durable construction, making it suitable for various applications.

Polarity or Channel Type: NPN

Being an NPN transistor allows for effective amplification and switching capabilities in positive voltage configurations.

Configuration: SINGLE

A single configuration simplifies design and integration into circuits, making it a straightforward choice for developers.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control power and signal paths in electronic devices.

Surface Mount: YES

Surface mount capability enables compact designs and facilitates automated assembly processes, enhancing production efficiency.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on printed circuit boards (PCBs), allowing for flexible layout options.

Terminal Form: GULL WING

Gull wing terminals provide superior soldering contact, improving reliability and performance in electrical connections.

No. of Terminals: 2

The two-terminal design streamlines connections and is ideal for simple applications where minimal parts are beneficial.

Package Style (Meter): SMALL OUTLINE

A small outline package style enhances space efficiency in compact electronics, making it suitable for modern, space-constrained applications.

Minimum DC Current Gain (hFE): 5

A minimum DC current gain of 5 indicates reasonable efficiency for amplification, suitable for various signal levels.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can function reliably in demanding environments without overheating.

Maximum Collector-Emitter Voltage: 400 V

The ability to handle up to 400 V allows the transistor to be used in high-voltage applications, increasing its versatility in circuits.

Transistor Element Material: SILICON

Silicon as the element material provides effective electrical characteristics and enhances the reliability of the transistor.

Maximum Collector Current (IC): 1.5 A

A maximum collector current of 1.5 A allows this transistor to manage substantial load currents, improving its application range.

Terminal Finish: TIN

The tin finish enhances solderability and electrical conductivity, ensuring reliable performance in various conditions.

Terminal Position: SINGLE

The single terminal position assists in easier circuit integration and layout design, minimizing complexity.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STD13003 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STD13003 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 9