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STD127DT4

STMicroelectronics

STD127DT4 by STMicroelectronics

STD127DT4 by STMicroelectronics is a NPN BJT transistor with 400V VCE, 4A IC, and hFE of 5. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,550 parts In-Stock

1+ parts

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4,550

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Digiode

USA . 3,993 parts In-Stock

1+ parts

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3,993

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Anansix

USA . 1,037 parts In-Stock

1+ parts

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1,037

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,687 parts In-Stock

1+ parts

$1.243

100+ parts

-

1k+ parts

$1.119

10k+ parts

-

1,687

$1.243

-

$1.119

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MKK Technologies

India . 228 parts In-Stock

1+ parts

$2.337

100+ parts

-

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228

$2.337

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DigiPath Technology Company

USA . 228 parts In-Stock

1+ parts

$2.337

100+ parts

-

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228

$2.337

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AZTECH Wire

Italy . 482 parts In-Stock

1+ parts

$21.380

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482

$21.380

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Corphita

USA . 4,274 parts In-Stock

1+ parts

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4,274

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Alle Elektronik GmbH

Germany . 3,697 parts In-Stock

1+ parts

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3,697

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Parana Technologies

USA . 416 parts In-Stock

1+ parts

-

100+ parts

$1.486

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416

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$1.486

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Overview

The STD127DT4 by STMicroelectronics is a top-quality Power Bipolar Junction Transistor with NPN polarity, designed for switching applications. With its reliable performance and durable plastic/epoxy package body material, this transistor offers seamless integration into various electronic devices. Its single configuration with built-in diode provides added convenience, while its small outline package style makes it easy to install. Whether you're working on industrial equipment or automotive systems, the STD127DT4 delivers exceptional value and efficiency. Trust STMicroelectronics for cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the transistor lightweight and cost-effective.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering good performance and versatility.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for protection against reverse voltage and inductive kickback, making the transistor suitable for various switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high-speed performance and efficiency in turning on and off electrical circuits.

Surface Mount: YES

Being surface mountable, this transistor can be easily installed on PCBs, saving space and enabling automated assembly.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient placement on PCBs and easy handling during assembly.

Terminal Form: GULL WING

The gull wing terminals provide mechanical stability and ease of soldering, ensuring reliable electrical connections.

No. of Terminals: 2

With only 2 terminals, this transistor is simple to integrate into circuit designs with minimal complexity.

Package Style (Meter): SMALL OUTLINE

The small outline package design saves space on the PCB, making it suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 5

With a minimum DC current gain of 5, this transistor offers consistent and reliable amplification characteristics in various circuits.

Maximum Collector-Emitter Voltage: 400 V

The high maximum collector-emitter voltage rating of 400 V allows for the transistor to handle higher voltage levels in switching applications.

Transistor Element Material: SILICON

Silicon-based transistors are known for their reliability, efficiency, and temperature stability, ensuring long-lasting performance.

Maximum Collector Current (IC): 4 A

With a maximum collector current of 4 A, this transistor can handle moderate to high current requirements in various applications.

Terminal Position: SINGLE

The single terminal position simplifies circuit connections and ensures ease of integration into electronic systems.

Case Connection: COLLECTOR

The collector connection design allows for easy routing of current to external components, enabling efficient circuit operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STD127DT4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STD127DT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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