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STSA851

STMicroelectronics

STSA851 by STMicroelectronics

STSA851 by STMicroelectronics is a NPN BJT transistor with 60V VCEO, 5A IC, and 130MHz fT. Ideal for switching applications, it has a max power dissipation of 1.1W in a cylindrical package with matte tin finish for through-hole mounting.

Median Price

$0.254

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 1,000 parts In-Stock

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$0.254

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$0.254

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Digiode

USA . 2,901 parts In-Stock

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2,901

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Vyrian

USA . 2,729 parts In-Stock

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2,729

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Anansix

USA . 2,706 parts In-Stock

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Holdelec - ElecDif-Pro

France . 160 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 160 parts In-Stock

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Distributors (Availability)

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Continental Prestige Electronics

USA . 6,624 parts In-Stock

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$0.254

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$0.249

6,624

$0.254

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$0.249

Argo Parts USA

USA . 3,650 parts In-Stock

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$0.254

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$0.246

3,650

$0.254

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$0.246

Netroflash

USA . 1,000 parts In-Stock

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$0.254

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$0.254

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IDEA Electronic Components Group

UK . 385 parts In-Stock

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$0.523

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$0.470

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385

$0.523

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$0.470

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MKK Technologies

India . 1,918 parts In-Stock

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$0.983

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DigiPath Technology Company

USA . 1,918 parts In-Stock

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$0.983

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$0.983

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Ampacity Inc.

Singapore . 1,416 parts In-Stock

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$1.050

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$1.050

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AZTECH Wire

Italy . 372 parts In-Stock

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$13.057

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$13.057

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Semicontronic

India . 1,137 parts In-Stock

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$46.050

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$44.899

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$44.668

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$44.668

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QUARKTWIN TECHNOLOGY LTD

USA . 25,077 parts In-Stock

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Parana Technologies

USA . 1,610 parts In-Stock

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$0.625

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$0.625

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Corphita

USA . 1,528 parts In-Stock

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Assy Fe

Spain . 225 parts In-Stock

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Overview

Enhance your electronic projects with the STSA851 from STMicroelectronics, a top-tier manufacturer known for superior quality and reliability. As a Power BJT transistor, this NPN device is ideal for switching applications, offering a maximum collector current of 5A and a transition frequency of 130MHz. With a compact cylindrical package and matte tin finish, the STSA851 is designed for easy integration and long-lasting performance. Trust in STMicroelectronics to provide innovative solutions that deliver value and efficiency to meet your project needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring reliable performance and durability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and are known for their high efficiency and fast switching speeds.

Configuration: SINGLE

Single configuration makes it easy to integrate this transistor into various electronic circuits without the need for complex setups.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high performance and efficiency in controlling currents.

Package Shape: ROUND

The round package shape allows for easy mounting and soldering onto circuit boards, making it convenient for assembly.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and make it easier to solder the transistor onto a circuit board.

Maximum Power Dissipation (Abs): 1.1 W

With a high maximum power dissipation, this transistor can handle more heat and operate at higher power levels without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers good mechanical strength and protection for the transistor, ensuring long-term reliability.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures stable and consistent amplification of current in the transistor's operation.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to be used in a wide range of environments without the risk of overheating.

Maximum Collector-Emitter Voltage: 60 V

With a high maximum collector-emitter voltage, this transistor can handle higher voltage levels, making it suitable for a variety of applications.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements, providing good performance and stability in various operating conditions.

Maximum Collector Current (IC): 5 A

The high maximum collector current allows this transistor to handle larger current loads, making it suitable for high-power applications.

Terminal Finish: MATTE TIN

Matte tin finish on the terminals ensures good solderability and long-term reliability of the connections.

Terminal Position: BOTTOM

Bottom terminal position makes it easier to install and solder the transistor onto a PCB, ensuring a secure and reliable connection.

Nominal Transition Frequency (fT): 130 MHz

With a high nominal transition frequency, this transistor offers fast switching speeds and high-frequency operation, making it suitable for advanced electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STSA851 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STSA851 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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