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STSA1805-AP

STMicroelectronics

STSA1805-AP by STMicroelectronics

STSA1805-AP by STMicroelectronics is a NPN BJT transistor with 60V VCEO, 5A IC, and 150MHz fT. Ideal for switching applications, it has a max power dissipation of 1.1W in a cylindrical package with matte tin finish.

Median Price

$0.873

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 740 parts In-Stock

1+ parts

$1.270

100+ parts

$0.808

1k+ parts

$0.558

10k+ parts

$0.477

740

$1.270

$0.808

$0.558

$0.477

DigiKey

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.476

2,000

-

-

-

$0.476

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,320 parts In-Stock

1+ parts

$0.477

100+ parts

-

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-

10k+ parts

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2,320

$0.477

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Digiode

USA . 1,242 parts In-Stock

1+ parts

$1.206

100+ parts

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1,242

$1.206

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Chip Stock

USA . 24,275 parts In-Stock

1+ parts

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24,275

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ComSIT Distribution GmbH

Germany . 4,000 parts In-Stock

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4,000

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ComSIT USA

USA . 4,000 parts In-Stock

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4,000

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Anansix

USA . 2,881 parts In-Stock

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2,881

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Bristol Electronics

USA . 529 parts In-Stock

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529

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 930 parts In-Stock

1+ parts

$0.350

100+ parts

-

1k+ parts

$0.315

10k+ parts

-

930

$0.350

-

$0.315

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MKK Technologies

India . 1,611 parts In-Stock

1+ parts

$0.657

100+ parts

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1,611

$0.657

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DigiPath Technology Company

USA . 1,611 parts In-Stock

1+ parts

$0.657

100+ parts

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1,611

$0.657

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Corphita

USA . 4,871 parts In-Stock

1+ parts

$1.143

100+ parts

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4,871

$1.143

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Component Stockers USA

USA . 2,325 parts In-Stock

1+ parts

$1.230

100+ parts

$0.780

1k+ parts

$0.540

10k+ parts

-

2,325

$1.230

$0.780

$0.540

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Microchip USA

USA . 6,568 parts In-Stock

1+ parts

$3.717

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6,568

$3.717

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Perfect Parts

USA . 22,723 parts In-Stock

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22,723

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Alle Elektronik GmbH

Germany . 3,661 parts In-Stock

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3,661

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Parana Technologies

USA . 1,124 parts In-Stock

1+ parts

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100+ parts

$0.418

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1,124

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$0.418

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Overview

Upgrade your power management systems with the STSA1805-AP from STMicroelectronics, a leading manufacturer known for delivering high-quality components. This Power Bipolar Junction Transistor offers reliable NPN switching capabilities in a convenient single configuration package. Ideal for various applications, this transistor boasts a maximum collector current of 5A and a nominal transition frequency of 150MHz. Trust in STMicroelectronics to provide you with the tools you need for efficient power control and management. Experience the value and benefits of the STSA1805-AP today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for long-term usage.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications.

Configuration: SINGLE

Simplified design and easy to integrate into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance.

Maximum Power Dissipation (Abs): 1.1 W

Can handle high power dissipation, suitable for demanding applications.

Maximum Collector-Emitter Voltage: 60 V

Can withstand high collector-emitter voltage, making it versatile for various circuits.

Maximum Collector Current (IC): 5 A

Capable of handling high collector currents, suitable for high-power applications.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency allows for fast switching speed, ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STSA1805-AP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STSA1805-AP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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