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STSA851-AP

STMicroelectronics

STSA851-AP by STMicroelectronics

STSA851-AP by STMicroelectronics is a NPN BJT transistor with 60V VCEO, 5A IC, and 130MHz fT. Ideal for switching applications, it has a single configuration in a cylindrical package with matte tin finish. Operating up to 150°C, it offers a min hFE of 30 and dissipation of 1.1W.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,014 parts In-Stock

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7,014

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Anansix

USA . 1,257 parts In-Stock

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1,257

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Digiode

USA . 523 parts In-Stock

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523

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Nova Conductors

Japan . 150 parts In-Stock

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150

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IDEA Electronic Components Group

UK . 1,110 parts In-Stock

1+ parts

$1.577

100+ parts

-

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$1.419

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1,110

$1.577

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$1.419

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MKK Technologies

India . 1,932 parts In-Stock

1+ parts

$2.965

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1,932

$2.965

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DigiPath Technology Company

USA . 1,932 parts In-Stock

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$2.965

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1,932

$2.965

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AZTECH Wire

Italy . 197 parts In-Stock

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$11.264

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197

$11.264

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Semicontronic

India . 973 parts In-Stock

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$39.050

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$38.074

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$37.878

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973

$39.050

$38.074

$37.878

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Ampacity Inc.

Singapore . 1,248 parts In-Stock

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$43.050

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$43.050

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QUARKTWIN TECHNOLOGY LTD

USA . 6,158 parts In-Stock

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Continental Prestige Electronics

USA . 4,633 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,312 parts In-Stock

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Parana Technologies

USA . 1,686 parts In-Stock

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$1.885

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$1.885

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Corphita

USA . 1,476 parts In-Stock

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Argo Parts USA

USA . 591 parts In-Stock

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Bastille Electronics

Australia . 94 parts In-Stock

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Overview

Enhance your electronic designs with the STSA851-AP Power Bipolar Junction Transistor by STMicroelectronics. With a reputation for superior quality and reliability, STMicroelectronics delivers cutting-edge technology in every product. Ideal for switching applications, this NPN transistor offers a maximum collector current of 5A and a transition frequency of 130 MHz. Whether you're designing power supplies, motor control systems, or lighting fixtures, the STSA851-AP provides the performance and efficiency you need to bring your projects to life. Experience the benefits of this high-performance transistor and take your designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protects the transistor from external elements, making it long-lasting and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits, making this product versatile and compatible with a wide range of applications.

Configuration: SINGLE

A single configuration simplifies circuit design and allows for easier integration into electronic systems.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times and efficient performance in turning on and off electrical signals.

Package Shape: ROUND

The round package shape provides efficient heat dissipation and allows for easier mounting in various circuit layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure a secure connection to the circuit board, reducing the risk of disconnection or signal loss.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in circuit design and connectivity options.

Maximum Power Dissipation (Abs): 1.1 W

The high maximum power dissipation allows for reliable operation under heavy load conditions without overheating.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand extreme environmental conditions and maintain performance reliability.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage rating ensures safe and stable operation in high-voltage applications.

Transistor Element Material: SILICON

Silicon transistors offer superior performance and reliability compared to other materials, making this product a durable and efficient choice.

Maximum Collector Current (IC): 5 A

The high maximum collector current allows for handling of large electrical currents, making this transistor suitable for high-power applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides corrosion resistance and ensures a reliable electrical connection over time.

Terminal Position: BOTTOM

Bottom terminal position makes it easier to mount and solder the transistor onto the circuit board, ensuring a secure connection.

Nominal Transition Frequency (fT): 130 MHz

With a high nominal transition frequency, this transistor can quickly switch between on and off states, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STSA851-AP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STSA851-AP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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