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STSA1805

STMicroelectronics

STSA1805 by STMicroelectronics

STSA1805 from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 1.1W, operates up to 150 °C, and supports collector-emitter voltages up to 60V. Ideal for efficient circuit designs in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,932 parts In-Stock

1+ parts

-

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8,932

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Digiode

USA . 3,488 parts In-Stock

1+ parts

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1k+ parts

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3,488

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Anansix

USA . 1,635 parts In-Stock

1+ parts

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1,635

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J2 Sourcing AB

Sweden . 1,500 parts In-Stock

1+ parts

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1,500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 641 parts In-Stock

1+ parts

$1.634

100+ parts

-

1k+ parts

$1.471

10k+ parts

-

641

$1.634

-

$1.471

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MKK Technologies

India . 627 parts In-Stock

1+ parts

$3.072

100+ parts

-

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627

$3.072

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DigiPath Technology Company

USA . 627 parts In-Stock

1+ parts

$3.072

100+ parts

-

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627

$3.072

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AZTECH Wire

Italy . 424 parts In-Stock

1+ parts

$20.570

100+ parts

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424

$20.570

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Ampacity Inc.

Singapore . 760 parts In-Stock

1+ parts

$48.050

100+ parts

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760

$48.050

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Corphita

USA . 2,705 parts In-Stock

1+ parts

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2,705

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Parana Technologies

USA . 871 parts In-Stock

1+ parts

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100+ parts

$1.954

1k+ parts

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871

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$1.954

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Perfect Parts

USA . 865 parts In-Stock

1+ parts

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865

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Overview

Unlock unparalleled performance with the STSA1805 from STMicroelectronics, a trusted name in power solutions. This high-quality NPN transistor excels in switching applications, delivering reliable efficiency and robust thermal handling up to 150 °C. With its durable plastic epoxy body and versatile cylindrical package, it seamlessly integrates into various electronic designs, empowering your projects with enhanced reliability and superior functionality. Elevate your designs and experience the assurance of a leading manufacturer at your service!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides excellent durability and strength, ensuring protection against moisture and environmental factors.

Polarity or Channel Type: NPN

The NPN configuration is versatile for various circuit designs, making it suitable for amplification and switching applications.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces space requirements in applications.

Transistor Application: SWITCHING

Optimized for switching applications, this BJT can efficiently control loads in electronic circuits.

Package Shape: ROUND

The round package shape offers ease of integration into PCB layouts and provides space-efficient designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure reliable mechanical and electrical connections, ideal for high-power applications.

No. of Terminals: 3

With three terminals, this BJT supports various configurations, enhancing its versatility in circuit designs.

Maximum Power Dissipation (Abs): 1.1 W

A power dissipation of 1.1 W allows the transistor to operate efficiently without overheating, ensuring longevity.

Package Style (Meter): CYLINDRICAL

The cylindrical package style aids in reducing thermal resistance, resulting in better thermal management.

Minimum DC Current Gain (hFE): 20

A minimum gain of 20 ensures sufficient amplification for various electronic applications, making it effective in low-signal operations.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this BJT to function reliably in demanding environments.

Maximum Collector-Emitter Voltage: 60 V

Supports a robust voltage rating of 60 V, ensuring compatibility with a wide range of circuit applications.

Transistor Element Material: SILICON

Silicon as the main material ensures good thermal stability and performance in electronic applications.

Maximum Collector Current (IC): 5 A

With a maximum collector current of 5 A, the product is capable of handling considerable loads, ideal for power applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish enhances solderability for improved reliability in PCB assembly.

Terminal Position: BOTTOM

Bottom terminal positioning allows for easier layout design and facilitates better heat dissipation on the PCB.

Nominal Transition Frequency (fT): 150 MHz

A transition frequency of 150 MHz promotes good performance in high-frequency applications, suitable for RF and switching use.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STSA1805 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STSA1805 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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