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STW3040

STMicroelectronics

STW3040 by STMicroelectronics

STW3040 from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 160 W, operates up to 150 °C, and supports collector-emitter voltages of 400 V. Ideal for high-performance electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,412 parts In-Stock

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2,412

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Digiode

USA . 1,974 parts In-Stock

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1,974

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Anansix

USA . 1,117 parts In-Stock

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1,117

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 379 parts In-Stock

1+ parts

$1.350

100+ parts

-

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$1.215

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379

$1.350

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$1.215

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MKK Technologies

India . 1,411 parts In-Stock

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$2.538

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1,411

$2.538

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DigiPath Technology Company

USA . 1,411 parts In-Stock

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$2.538

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1,411

$2.538

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AZTECH Wire

Italy . 250 parts In-Stock

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$10.870

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250

$10.870

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Component Stockers USA

USA . 789 parts In-Stock

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$99.990

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789

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 7,966 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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Alle Elektronik GmbH

Germany . 3,292 parts In-Stock

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3,292

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Corphita

USA . 3,138 parts In-Stock

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Metaverse IC Inc.

Canada . 2,580 parts In-Stock

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2,580

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Parana Technologies

USA . 1,223 parts In-Stock

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$1.614

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$1.614

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Overview

Elevate your designs with the STW3040 by STMicroelectronics, a powerhouse in power transistors. Known for their unrivaled quality and reliability, STMicroelectronics delivers exceptional performance in demanding applications. The STW3040 excels in switching tasks, guaranteeing durability with optimal power dissipation and high current handling. Experience enhanced efficiency and robust operation, empowering your projects to achieve more with confidence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and protection against environmental factors, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

The NPN configuration allows for efficient switching applications, making it ideal for a wide range of electronic circuits.

Configuration: SINGLE

A single transistor configuration provides simplicity in design and easy integration into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can handle quick on/off cycles, enhancing performance in control systems.

Package Shape: RECTANGULAR

The rectangular shape allows for compact designs and facilitates easy placement on PCBs, optimizing space usage.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical connections, ensuring stability in various mounting conditions.

No. of Terminals: 3

The three-terminal design allows for straightforward connection and integration into circuits, simplifying design processes.

Maximum Power Dissipation (Abs): 160 W

With a high maximum power dissipation, this transistor can handle demanding applications without overheating, ensuring reliability.

Package Style (Meter): FLANGE MOUNT

Flange mounting offers enhanced stability and ease of installation in various hardware setups.

Minimum DC Current Gain (hFE): 10

A minimum hFE of 10 indicates good current amplification, making it suitable for amplifying weak signals.

Maximum Operating Temperature: 150 °C

The ability to operate at temperatures up to 150 °C ensures that this transistor can function in high-temperature environments.

Maximum Collector-Emitter Voltage: 400 V

A high collector-emitter voltage rating allows for applications in high-voltage environments, increasing versatility.

Transistor Element Material: SILICON

Silicon as the element material contributes to excellent thermal and electrical performance, making it a reliable choice in electronic devices.

Maximum Collector Current (IC): 30 A

The capability to handle a maximum collector current of 30 A means this transistor can manage substantial loads, suitable for powerful applications.

Terminal Position: SINGLE

Single terminal positioning aids in straightforward circuit layouts, improving manufacturing efficiency.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STW3040 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STW3040 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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