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PN2907AT&A

Continental Device India

PN2907AT&A by Continental Device India

PN2907AT&A by Continental Device India is a PNP BJT transistor with 60V VCEsat, 1.6V VCEsat, and 100 hFE. Ideal for switching applications due to its fast rise/fall times of 40/30ns and high transition frequency of 200MHz. With a power dissipation of 1.5W, it operates in temperatures ranging from -55 to +150°C.

Median Price

$0.077

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Nova Conductors

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Continental Prestige Electronics

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Argo Parts USA

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Bastille Electronics

Australia . 800 parts In-Stock

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AZTECH Wire

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Overview

Discover the PN2907AT&A by Continental Device India, a top-quality Power Bipolar Junction Transistor designed for switching applications. With a single PNP configuration and a maximum collector-emitter voltage of 60V, this transistor offers reliable performance in a variety of electronic devices. Made with superior silicon material, this transistor ensures high DC current gain and quick rise and fall times for efficient operation. Trust in Continental Device India's commitment to excellence and innovation for all your transistor needs. Elevate your electronics with the PN2907AT&A today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this product suitable for such purposes.

Configuration: SINGLE

Simplifies circuit design by having only one transistor in the package, reducing complexity.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Maximum Rise Time (tr): 40 ns

Fast rise time allows for quick switching and response times, critical in many electrical systems.

Maximum VCEsat: 1.6 V

Low VCEsat allows for minimal power loss and efficient operation of the transistor.

Package Shape: ROUND

Round shape provides mechanical stability and ease of mounting in different applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering onto PCBs.

Maximum Fall Time (tf): 30 ns

Fast fall time complements the rise time for quick switching, enhancing overall performance.

No. of Terminals: 3

Simpler circuit integration with the standard three-terminal configuration.

Maximum Power Dissipation (Abs): 1.5 W

Handles higher power dissipation levels, suitable for demanding applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package offers efficient heat dissipation and compact design for space-constrained environments.

Maximum Power Dissipation Ambient: 0.625 W

Ensures stable performance even under varying ambient conditions.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures signal amplification and reliable operation in various circuits.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in diverse environments and applications.

Maximum Collector-Base Capacitance: 8 pF

Low capacitance helps minimize signal distortion and interference in high-frequency circuits.

Maximum Collector-Emitter Voltage: 60 V

High collector-emitter voltage rating provides protection against voltage spikes and overloads.

Transistor Element Material: SILICON

Silicon material offers excellent semiconductor properties for efficient transistor operation.

Maximum Turn On Time (ton): 50 ns

Fast turn-on time ensures quick activation, suitable for high-speed switching applications.

Minimum Operating Temperature: -55 °C

Capable of functioning in extreme low-temperature conditions, expanding its usability.

Maximum Collector Current (IC): 0.6 A

Handles moderate collector current levels, suitable for various transistor applications.

Maximum Turn Off Time (toff): 110 ns

Fast turn-off time complements the turn-on time for efficient switching transitions.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and assembly, enhancing ease of use.

Maximum Time At Peak Reflow Temperature (s): 10

Can withstand peak reflow temperatures for a short duration, ensuring proper soldering during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability enables reliable soldering in lead-free assembly processes.

Reference Standard: IATF 16949

Compliance with automotive quality management system standards ensures high product reliability and performance.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency enables fast switching speeds and high-frequency operation in various applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) PN2907AT&A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Continental Device India

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

8 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

Maximum Fall Time (tf):

30 ns

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.625 W

Maximum Power Dissipation (Abs):

Reference Standard:

IATF 16949

Maximum Rise Time (tr):

40 ns

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

110 ns

Maximum Turn On Time (ton):

50 ns

Maximum VCEsat:

1.6 V

Trade Compliance

PN2907AT&A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

Continental Device India

Continental Device India Ltd., (CDIL) is an ISO 9001, IATF 16949, and ISO 14001 certified company that pioneered the manufacturing of Silicon Semiconductor Chips and Devices in India in 1964. It launched its Electronic Manufacturing Services (EMS) division (Deltron) in 1982. Manufacturing semiconductors for over 50 years, has created a name for CDIL in India and a brand that is recognized globally. This has only been possible by adhering to international standards of quality, constant technology and process upgrades, and due to the hard work of a team of dedicated professionals who have laid down the standards for R&D, engineering and management in India.

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