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TR236

STMicroelectronics

TR236 by STMicroelectronics

TR236 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 70W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for high-performance electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,145 parts In-Stock

1+ parts

-

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5,145

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Digiode

USA . 4,613 parts In-Stock

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4,613

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Anansix

USA . 932 parts In-Stock

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932

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 706 parts In-Stock

1+ parts

$1.026

100+ parts

-

1k+ parts

$0.923

10k+ parts

-

706

$1.026

-

$0.923

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MKK Technologies

India . 399 parts In-Stock

1+ parts

$1.929

100+ parts

-

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-

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399

$1.929

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DigiPath Technology Company

USA . 399 parts In-Stock

1+ parts

$1.929

100+ parts

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399

$1.929

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$2.018

100+ parts

$1.836

1k+ parts

$1.655

10k+ parts

-

2,500

$2.018

$1.836

$1.655

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AZTECH Wire

Italy . 668 parts In-Stock

1+ parts

$9.950

100+ parts

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668

$9.950

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Component Stockers USA

USA . 487 parts In-Stock

1+ parts

$99.990

100+ parts

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487

$99.990

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Alle Elektronik GmbH

Germany . 3,671 parts In-Stock

1+ parts

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3,671

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Parana Technologies

USA . 1,039 parts In-Stock

1+ parts

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$1.226

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1,039

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$1.226

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Corphita

USA . 176 parts In-Stock

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176

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Overview

Unlock the potential of your designs with the TR236 NPN transistor from STMicroelectronics, a trusted leader in power solutions. Perfectly engineered for efficient switching applications, this robust transistor ensures reliability and performance under high demands. With exceptional power dissipation capabilities and a temperature tolerance up to 150 °C, the TR236 delivers outstanding value and durability, making it an ideal choice for innovative projects across various industries. Experience the benefits of superior quality and unmatched support from STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides robust physical protection while allowing for lightweight design, enhancing the durability of the transistor.

Polarity or Channel Type: NPN

The NPN configuration is commonly used for switching applications, making this transistor suitable for a wide range of electronic devices.

Configuration: SINGLE

A single configuration simplifies circuit design and integration into various applications, making it easy to implement in designs.

Transistor Application: SWITCHING

Optimized for switching, this transistor is ideal for power control applications, enhancing system efficiency.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on PCBs, making it easier to design compact electronic layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure mounting and reliable electrical connections, particularly useful in high-power applications.

No. of Terminals: 3

With three terminals, this transistor offers straightforward integration and functionality, allowing for simplified circuit designs.

Maximum Power Dissipation (Abs): 70 W

A maximum power dissipation of 70 W indicates that this transistor can handle significant power loads, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style enhances thermal management and provides stability during operation, critical in high-power applications.

Minimum DC Current Gain (hFE): 8

A minimum DC current gain of 8 ensures reliable amplification, making it efficient for a variety of electronic circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can function effectively in high-temperature environments, improving reliability.

Maximum Collector-Emitter Voltage: 400 V

A maximum collector-emitter voltage of 400 V provides flexibility for use in high-voltage applications, ensuring safe and reliable operation.

Transistor Element Material: SILICON

Silicon as the material allows for excellent electrical characteristics and performance, ensuring durability and efficiency in operation.

Maximum Collector Current (IC): 4 A

Capable of handling 4 A of collector current, this transistor is suitable for high-current applications, providing robustness and reliability.

Terminal Position: SINGLE

Single terminal position simplifies the design and layout, making it user-friendly for engineers and designers.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TR236 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TR236 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

4820-15-142-2769, 4820151422769

NIIN

151422769

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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