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STN878

STMicroelectronics

STN878 by STMicroelectronics

STN878 by STMicroelectronics is a compact NPN BJT designed for switching applications. It features a max power dissipation of 1.6 W, operates up to 150 °C, and supports collector currents up to 5 A. Ideal for efficient power management in electronic circuits.

Median Price

$0.251

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 65 parts In-Stock

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$0.251

65

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$0.251

Distributors (In-Stock)

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Vyrian

USA . 5,490 parts In-Stock

1+ parts

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5,490

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Digiode

USA . 1,501 parts In-Stock

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1,501

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Anansix

USA . 262 parts In-Stock

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262

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Distributors (Availability)

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Advanced Electronics

New Zealand . 300 parts In-Stock

1+ parts

$0.355

100+ parts

$0.323

1k+ parts

$0.291

10k+ parts

-

300

$0.355

$0.323

$0.291

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IDEA Electronic Components Group

UK . 911 parts In-Stock

1+ parts

$0.363

100+ parts

-

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$0.327

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911

$0.363

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$0.327

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MKK Technologies

India . 848 parts In-Stock

1+ parts

$0.683

100+ parts

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848

$0.683

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DigiPath Technology Company

USA . 848 parts In-Stock

1+ parts

$0.683

100+ parts

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848

$0.683

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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Corphita

USA . 4,578 parts In-Stock

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4,578

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Alle Elektronik GmbH

Germany . 535 parts In-Stock

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535

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Parana Technologies

USA . 167 parts In-Stock

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$0.434

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167

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$0.434

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Perfect Parts

USA . 95 parts In-Stock

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95

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Overview

Experience unparalleled performance with the STN878 from STMicroelectronics, a trusted leader in power solutions. This NPN bipolar junction transistor excels in efficiency and reliability, perfect for high-demand switching applications. Its compact design ensures versatile integration into various electronic systems, while its robust thermal management makes it ideal for challenging environments. Elevate your projects with quality you can trust—choose STMicroelectronics for innovation that empowers your success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent durability and resistance to environmental factors, making the transistor reliable in various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in switching applications, providing efficient performance in circuit designs.

Configuration: SINGLE

A single configuration simplifies design and integration into circuits, making it easier for engineers to implement.

Transistor Application: SWITCHING

Designed specifically for switching applications, this BJT ensures fast and efficient operation, essential for modern electronics.

Surface Mount: YES

Surface mount technology allows for compact designs and automated assembly, reducing overall production costs.

Package Shape: RECTANGULAR

The rectangular shape is optimized for space efficiency on PCBs, fitting into smaller designs without compromising performance.

Terminal Form: GULL WING

Gull wing terminals enhance solder joint reliability due to their design, improving the overall durability of the connection.

No. of Terminals: 4

Having four terminals provides versatility in circuit connectivity, enabling more complex and powerful configurations.

Maximum Power Dissipation (Abs): 1.6 W

A maximum power dissipation of 1.6 W allows for handling considerable power levels, suitable for diverse electronic applications.

Package Style (Meter): SMALL OUTLINE

Small outline packages minimize space on PCBs while maximizing performance, ideal for space-constrained designs.

Minimum DC Current Gain (hFE): 70

A minimum gain of 70 ensures effective current amplification, making it highly efficient for switching and amplification tasks.

Maximum Operating Temperature: 150 °C

With a high operating temperature tolerance, this transistor is suitable for high-temperature environments and demanding applications.

Maximum Collector-Emitter Voltage: 30 V

A maximum voltage rating of 30 V provides flexibility for different circuit configurations, enhancing overall usability.

Transistor Element Material: SILICON

Silicon is the standard material for BJTs, offering reliable performance and stability in various electronic applications.

Maximum Collector Current (IC): 5 A

A collector current rating of 5 A allows the transistor to handle substantial loads, making it suitable for high-power applications.

Terminal Finish: MATTE TIN

Matte tin finish improves solderability and enhances durability, thereby extending the lifespan of connections on the PCB.

Terminal Position: DUAL

Dual terminal positioning optimizes PCB layout and design flexibility, allowing for better integration into various electronic systems.

Case Connection: COLLECTOR

The collector case connection provides easy access for circuit designs, optimizing footprint and enhancing overall performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STN878 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STN878 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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