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STN817

STMicroelectronics

STN817 by STMicroelectronics

STN817 by STMicroelectronics is a PNP BJT designed for switching applications. It features a max power dissipation of 1.6 W, operates up to 150 °C, and supports collector-emitter voltages up to 80 V. Its compact surface mount design ensures efficient performance in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,744 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,744

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Vyrian

USA . 2,324 parts In-Stock

1+ parts

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2,324

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Digiode

USA . 2,095 parts In-Stock

1+ parts

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2,095

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,217 parts In-Stock

1+ parts

$0.589

100+ parts

-

1k+ parts

$0.530

10k+ parts

-

2,217

$0.589

-

$0.530

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MKK Technologies

India . 883 parts In-Stock

1+ parts

$1.107

100+ parts

-

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883

$1.107

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DigiPath Technology Company

USA . 883 parts In-Stock

1+ parts

$1.107

100+ parts

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883

$1.107

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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25,000

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Kepictronics

USA . 20,000 parts In-Stock

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20,000

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Corphita

USA . 2,978 parts In-Stock

1+ parts

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2,978

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Parana Technologies

USA . 889 parts In-Stock

1+ parts

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100+ parts

$0.704

1k+ parts

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889

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$0.704

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Overview

Unlock the potential of your designs with the STN817 from STMicroelectronics, a top-tier choice in power Bipolar Junction Transistors. Renowned for their reliability and innovation, STMicroelectronics ensures quality that stands out in every application, from efficient switching to robust performance in demanding environments. Experience enhanced efficiency and thermal management, making the STN817 the perfect partner for your next project, delivering exceptional value and superior results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body offers excellent thermal stability and protection from environmental factors, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

The PNP configuration allows for straightforward integration in circuits that require this polarity, ensuring compatibility in designs.

Configuration: SINGLE

A single transistor configuration simplifies circuit design and reduces space requirements on PCBs.

Transistor Application: SWITCHING

Designed for switching applications, this BJT can effectively control and amplify electronic signals, making it versatile in both low and high-speed operations.

Surface Mount: YES

Surface mount capability enables automated assembly processes, improving production efficiency and reducing costs.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization in circuit layouts, critical in compact electronic designs.

Terminal Form: GULL WING

Gull wing terminals provide a reliable connection to the PCB while allowing for easy inspection and soldering.

No. of Terminals: 4

With four terminals, this transistor can be used in various configurations, enhancing its flexibility in circuit applications.

Maximum Power Dissipation (Abs): 1.6 W

A maximum power dissipation of 1.6 W indicates a robust capability to handle power without overheating, making it reliable in demanding environments.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to a compact design, suitable for modern electronic devices with limited space.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures efficient amplification, improving overall transistor performance in signal processing applications.

Maximum Operating Temperature: 150 °C

Operable at temperatures up to 150 °C, this BJT is well-suited for high-temperature applications, enhancing its versatility and reliability.

Maximum Collector-Emitter Voltage: 80 V

The ability to handle up to 80 V allows this transistor to be used in a wide range of high-voltage applications, increasing design options.

Transistor Element Material: SILICON

Silicon construction ensures good semiconductor properties, making this transistor effective for diverse electronic circuits.

Maximum Collector Current (IC): 1.5 A

With a maximum collector current rating of 1.5 A, this transistor can efficiently control a decent amount of current, enhancing its functionality in power switching.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers good solderability, ensuring strong connections and longevity in various PCB applications.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting and connection options, facilitating design integration in various layouts.

Case Connection: COLLECTOR

The collector connection on the case simplifies circuit design and layout, enabling precise and reliable configurations in applications.

Nominal Transition Frequency (fT): 50 MHz

A transition frequency of 50 MHz highlights this transistor's capability for high-speed applications, making it suitable for communication and processing tasks.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STN817 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STN817 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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