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STN826

STMicroelectronics

STN826 by STMicroelectronics

STN826 by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.6 W and a collector current of 3 A. It operates up to 150 °C with a voltage rating of 30 V. This compact surface mount transistor ensures efficient performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,021 parts In-Stock

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2,021

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Vyrian

USA . 1,481 parts In-Stock

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1,481

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Anansix

USA . 1,245 parts In-Stock

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1,245

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 454 parts In-Stock

1+ parts

$0.638

100+ parts

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$0.574

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454

$0.638

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$0.574

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MKK Technologies

India . 72 parts In-Stock

1+ parts

$1.199

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72

$1.199

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DigiPath Technology Company

USA . 72 parts In-Stock

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$1.199

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72

$1.199

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Authorized Procurement Solutions

USA . 7,500 parts In-Stock

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7,500

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Metaverse IC Inc.

Canada . 6,600 parts In-Stock

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6,600

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A-Z Elektronik GmbH

Germany . 5,942 parts In-Stock

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5,942

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Kepictronics

USA . 4,600 parts In-Stock

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4,600

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Parana Technologies

USA . 1,788 parts In-Stock

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$0.762

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1,788

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$0.762

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Corphita

USA . 242 parts In-Stock

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242

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Overview

Unlock unparalleled performance with the STN826 from STMicroelectronics, a leader in innovative semiconductor solutions. This PNP bipolar junction transistor is designed for efficient switching applications, ensuring reliability and durability in tough environments. With its compact surface mount design and high power dissipation capability, the STN826 offers exceptional value, making it ideal for a variety of electronic devices—from consumer products to industrial machinery. Trust in STMicroelectronics to deliver quality that elevates your projects!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and resistance to environmental factors, making the BJT suitable for diverse applications.

Polarity or Channel Type: PNP

Being a PNP transistor allows for simpler integration into circuits requiring a positive voltage supply for switching applications.

Configuration: SINGLE

A single configuration simplifies the design and implementation in various electronic circuits.

Transistor Application: SWITCHING

This BJT is optimized for switching applications, offering fast response times and reliability for control systems.

Surface Mount: YES

The surface mount capability allows for compact designs and efficient use of board space, essential in modern electronic devices.

Package Shape: RECTANGULAR

The rectangular shape is suitable for high-density circuit board layouts, enhancing efficiency in space utilization.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and provide mechanical stability, improving assembly processes.

No. of Terminals: 4

Having four terminals allows for simplified circuit connections while maintaining versatility in applications.

Maximum Power Dissipation (Abs): 1.6 W

This power dissipation capability ensures reliable operation under higher current conditions without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package leads to space-efficient designs, making it ideal for portable and compact electronic devices.

Minimum DC Current Gain (hFE): 30

A minimum hFE of 30 ensures adequate amplification in circuits, making it effective in various amplification applications.

Maximum Operating Temperature: 150 °C

The high operating temperature rating allows this BJT to function in demanding environments, enhancing its application range.

Maximum Collector-Emitter Voltage: 30 V

The ability to withstand up to 30 V makes this transistor suitable for a wide range of applications within common voltage limits.

Transistor Element Material: SILICON

Silicon material is well-known for its excellent electrical properties, resulting in reliable and efficient performance.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3 A, this BJT can handle significant loads, making it ideal for power switching applications.

Terminal Position: DUAL

Dual terminal positioning ensures effective heat dissipation and enhances the overall performance of the transistor.

Case Connection: COLLECTOR

The collector connection facilitates reliable integration into circuits, ensuring stable operation in switching applications.

Nominal Transition Frequency (fT): 100 MHz

A transition frequency of 100 MHz indicates the BJT's capability for high-speed switching, making it suitable for RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STN826 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STN826 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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