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STN888

STMicroelectronics

STN888 by STMicroelectronics

STN888 by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.6 W and a collector current of 5 A. It operates at up to 150 °C with a collector-emitter voltage of 30 V. This compact surface mount transistor ensures efficient performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,637 parts In-Stock

1+ parts

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5,637

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Anansix

USA . 2,789 parts In-Stock

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2,789

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Digiode

USA . 292 parts In-Stock

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292

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 919 parts In-Stock

1+ parts

$0.699

100+ parts

-

1k+ parts

$0.629

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919

$0.699

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$0.629

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MKK Technologies

India . 1,891 parts In-Stock

1+ parts

$1.315

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1,891

$1.315

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DigiPath Technology Company

USA . 1,891 parts In-Stock

1+ parts

$1.315

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1,891

$1.315

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AZTECH Wire

Italy . 676 parts In-Stock

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$10.300

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676

$10.300

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Ampacity Inc.

Singapore . 526 parts In-Stock

1+ parts

$51.050

100+ parts

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526

$51.050

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Alle Elektronik GmbH

Germany . 3,240 parts In-Stock

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3,240

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Corphita

USA . 2,731 parts In-Stock

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2,731

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Perfect Parts

USA . 399 parts In-Stock

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399

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Parana Technologies

USA . 114 parts In-Stock

1+ parts

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$0.836

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114

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$0.836

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Overview

Unlock the power of innovation with the STN888 by STMicroelectronics, a pinnacle in PNP power transistors designed for efficient switching applications. Manufactured by a leader in semiconductor technology, this compact device enhances performance while ensuring reliability in your projects. With superior thermal management and robust design, the STN888 is perfect for a variety of uses, from consumer electronics to industrial automation, delivering unmatched quality and value that elevates your designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: PNP

As a PNP transistor, it excels in high-side switching applications, providing flexibility in circuit designs.

Configuration: SINGLE

The single configuration simplifies integration into circuits, reducing space requirements and complexity.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures efficient control in digital and analog circuits.

Surface Mount: YES

Being surface mount technology (SMT) compatible allows for compact PCB designs and automated assembly.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on circuit boards, allowing for better layout design.

Terminal Form: GULL WING

Gull wing terminals enhance soldering reliability and are well-suited for automated manufacturing processes.

No. of Terminals: 4

With four terminals, it provides necessary connections while keeping the design simple and efficient.

Maximum Power Dissipation (Abs): 1.6 W

A power dissipation rating of 1.6 W allows it to handle considerable loads without overheating, making it suitable for varied applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to a low-profile solution, ideal for space-constrained applications.

Minimum DC Current Gain (hFE): 70

A minimum DC current gain of 70 indicates good amplification capabilities, enhancing signal integrity in circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, it is suitable for high-temperature environments, thereby increasing reliability.

Maximum Collector-Emitter Voltage: 30 V

The ability to withstand up to 30 V makes it versatile for various voltage applications while maintaining safety.

Transistor Element Material: SILICON

Silicon as the element material ensures good performance and stability in diverse electronic applications.

Maximum Collector Current (IC): 5 A

With a collector current rating of 5 A, it is capable of driving significant loads in power applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides excellent solderability, ensuring reliable connections in PCB assemblies.

Terminal Position: DUAL

The dual terminal position facilitates easier layout and routing options in circuit designs, enhancing versatility.

Case Connection: COLLECTOR

Having the collector as the case connection enhances thermal management and improves overall device performance.

Maximum Time At Peak Reflow Temperature (s): 30

A peak reflow temperature time of 30 seconds allows for efficient manufacturing processes while preventing damage to the transistor.

Peak Reflow Temperature °C: 260

Enduring up to 260 °C in reflow processes ensures compatibility with lead-free soldering standards, aligning with modern manufacturing practices.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STN888 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STN888 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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