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STN817A

STMicroelectronics

STN817A by STMicroelectronics

STN817A by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.6 W and an operating temp up to 150 °C. It supports a collector-emitter voltage of 80 V and offers a min DC gain (hFE) of 30. This compact surface mount transistor is ideal for efficient circuit designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Vyrian

USA . 8,908 parts In-Stock

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Digiode

USA . 2,252 parts In-Stock

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Connector Distribution Corp

USA . 1,093 parts In-Stock

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Right Parts Inc.

USA . 1,093 parts In-Stock

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J2 Sourcing AB

Sweden . 837 parts In-Stock

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Prism Electronics

USA . 256 parts In-Stock

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Anansix

USA . 249 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 206 parts In-Stock

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$1.132

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$1.018

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$1.018

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MKK Technologies

India . 1,629 parts In-Stock

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$2.128

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DigiPath Technology Company

USA . 1,629 parts In-Stock

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$2.128

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AZTECH Wire

Italy . 1,072 parts In-Stock

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$10.090

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Ampacity Inc.

Singapore . 336 parts In-Stock

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$31.050

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Kepictronics

USA . 60,000 parts In-Stock

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,282 parts In-Stock

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Perfect Parts

USA . 2,972 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,620 parts In-Stock

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Corphita

USA . 448 parts In-Stock

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Parana Technologies

USA . 158 parts In-Stock

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$1.353

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Overview

Unlock unparalleled performance with the STN817A from STMicroelectronics—a superb PNP power BJT designed for efficient switching applications. Renowned for their commitment to quality and innovation, STMicroelectronics delivers a product that ensures reliability and durability in high-demand environments. Ideal for compact designs, the STN817A enhances efficiency while providing unmatched thermal management, making it your go-to solution for next-level electronic projects. Elevate your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package provides durability and protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration in circuits that require negative control signals, offering flexibility in design.

Configuration: SINGLE

As a single transistor, it simplifies designs and reduces space on printed circuit boards (PCBs), facilitating compact applications.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor can handle fast operational speeds, making it ideal for modern electronic circuits.

Surface Mount: YES

Surface mount capability allows for automated assembly and a smaller footprint, enhancing manufacturing efficiency.

Package Shape: RECTANGULAR

Rectangular package shape aids in denser layouts on PCBs, maximizing space utilization.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering characteristics, resulting in reliable electrical connections.

No. of Terminals: 4

With four terminals, this transistor can easily integrate into various circuit configurations, allowing for versatility.

Maximum Power Dissipation (Abs): 1.6 W

A maximum power dissipation of 1.6 W ensures the transistor can handle substantial workloads without overheating, promoting reliability.

Package Style (Meter): SMALL OUTLINE

Small outline packaging is advantageous for space-constrained applications, making this transistor suitable for compact devices.

Minimum DC Current Gain (hFE): 30

A minimum current gain of 30 ensures efficient amplification, contributing to improved performance in various applications.

Maximum Operating Temperature: 150 C

Operating up to 150 °C offers robustness and reliability in high-temperature environments, extending its usage in tough conditions.

Maximum Collector-Emitter Voltage: 80 V

An 80 V voltage limit provides versatility in high-voltage applications, making it suitable for diverse electronic circuit designs.

Transistor Element Material: SILICON

Silicon as the element material ensures steady performance and reliability, a standard for most modern electronic devices.

Maximum Collector Current (IC): 1.5 A

Handling up to 1.5 A of collector current equips this transistor for demanding applications that require higher current handling.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish offers good solderability and corrosion resistance, increasing the longevity and reliability of connections.

Terminal Position: DUAL

Dual terminal position provides improved flexibility in PCB layout designs, making routing easier and more efficient.

Case Connection: COLLECTOR

Collector case connection simplifies the design for various applications, facilitating ease of integration.

Maximum Time At Peak Reflow Temperature: 30 s

The 30 seconds peak reflow time allows for efficient soldering processes during manufacturing, minimizing thermal stress on components.

Peak Reflow Temperature: 260 C

A peak reflow temperature of 260 °C ensures compatibility with robust soldering techniques for reliable assembly.

Nominal Transition Frequency (fT): 50 MHz

With a transition frequency of 50 MHz, this transistor is suitable for high-speed switching applications, ensuring optimal performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STN817A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STN817A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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