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2STA2510

STMicroelectronics

2STA2510 by STMicroelectronics

2STA2510 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 125W, operates up to 150 °C, and supports collector-emitter voltages of 100V. Ideal for high-performance electronic circuits.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Digiode

USA . 4,568 parts In-Stock

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Vyrian

USA . 2,304 parts In-Stock

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Anansix

USA . 2,271 parts In-Stock

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R&J Components

USA . 900 parts In-Stock

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900

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Native Components

USA . 367 parts In-Stock

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$0.157

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$0.151

367

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$0.151

Northwest PG Solutions

USA . 1,040 parts In-Stock

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$0.173

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$0.152

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$0.173

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$0.152

IDEA Electronic Components Group

UK . 1,806 parts In-Stock

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$1.371

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$1.234

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MKK Technologies

India . 1,924 parts In-Stock

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$2.578

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DigiPath Technology Company

USA . 1,924 parts In-Stock

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$2.578

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AZTECH Wire

Italy . 959 parts In-Stock

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$16.310

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Corphita

USA . 1,925 parts In-Stock

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Perfect Parts

USA . 754 parts In-Stock

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Parana Technologies

USA . 498 parts In-Stock

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$1.639

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Overview

Unlock the potential of your projects with the 2STA2510 from STMicroelectronics, a top-tier PNP power transistor designed for versatile switching applications. With its robust performance and reliable quality, this transistor ensures optimal efficiency in demanding environments. STMicroelectronics, a leader in innovation, delivers unmatched reliability and excellence, making the 2STA2510 an invaluable asset for enhancing your designs while maximizing power and performance at every turn.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliability and protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for effective circuit designs where current flows from the collector to the emitter, providing flexibility in circuit applications.

Configuration: SINGLE

A single configuration simplifies integration into circuits, making it ideal for compact designs where space is a concern.

Transistor Application: SWITCHING

Designed for switching applications, this transistor facilitates fast on-off control of devices, enhancing performance in various electronic circuits.

Package Shape: RECTANGULAR

The rectangular shape optimizes space in circuit boards, allowing for efficient layout and organization in designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals support robust mechanical connections, enhancing stability and durability in demanding applications.

No. of Terminals: 3

The three terminals provide essential connections for input, output, and control, making it versatile for different circuit types.

Maximum Power Dissipation (Abs): 125 W

With a maximum power dissipation of 125 W, this transistor can efficiently handle high-power applications without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount style allows for secure installation, providing stability in various mounting scenarios, which is crucial in industrial environments.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures efficient amplification of signals, making it suitable for low-power applications.

Maximum Operating Temperature: 150 °C

An operating temperature up to 150 °C enhances reliability in high-temperature environments, making it ideal for industrial applications.

Maximum Collector-Emitter Voltage: 100 V

A maximum collector-emitter voltage of 100 V provides a wide range of applications in various electronic circuits while maintaining safety.

Transistor Element Material: SILICON

Silicon as the element material guarantees excellent performance and reliability, standard in the transistor industry.

Maximum Collector Current (IC): 25 A

With a maximum collector current of 25 A, this transistor can handle high loads, making it suitable for powerful electronic circuits.

Terminal Position: SINGLE

Having a single terminal position enhances ease of installation and positioning within electronic designs, simplifying circuit design.

Nominal Transition Frequency (fT): 20 MHz

A nominal transition frequency of 20 MHz indicates good performance at higher frequencies, making it suitable for applications requiring fast switching.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STA2510 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2STA2510 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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