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2STA2120

STMicroelectronics

2STA2120 by STMicroelectronics

2STA2120 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 200W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.

Median Price

$1.540

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 275 parts In-Stock

1+ parts

$1.540

100+ parts

$1.015

1k+ parts

$1.015

10k+ parts

$1.015

275

$1.540

$1.015

$1.015

$1.015

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,871 parts In-Stock

1+ parts

$1.463

100+ parts

-

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-

10k+ parts

-

4,871

$1.463

-

-

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Vyrian

USA . 4,734 parts In-Stock

1+ parts

-

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4,734

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Anansix

USA . 634 parts In-Stock

1+ parts

-

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634

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Zilex Electronics Inc.

Canada . 470 parts In-Stock

1+ parts

-

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470

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ACDS - Activité Composants Distribution Service

France . 117 parts In-Stock

1+ parts

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117

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Bristol Electronics

USA . 117 parts In-Stock

1+ parts

-

100+ parts

$1.012

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-

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117

-

$1.012

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Dan-Mar Components

USA . 117 parts In-Stock

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117

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,614 parts In-Stock

1+ parts

$0.467

100+ parts

-

1k+ parts

$0.421

10k+ parts

-

1,614

$0.467

-

$0.421

-

Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$0.648

100+ parts

$0.590

1k+ parts

$0.531

10k+ parts

-

40

$0.648

$0.590

$0.531

-

MKK Technologies

India . 1,532 parts In-Stock

1+ parts

$0.879

100+ parts

-

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1,532

$0.879

-

-

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DigiPath Technology Company

USA . 1,532 parts In-Stock

1+ parts

$0.879

100+ parts

-

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-

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1,532

$0.879

-

-

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Corohmni

South Africa . 448 parts In-Stock

1+ parts

$1.006

100+ parts

-

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448

$1.006

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Corphita

USA . 2,073 parts In-Stock

1+ parts

$1.386

100+ parts

-

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2,073

$1.386

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Microchip USA

USA . 5,725 parts In-Stock

1+ parts

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5,725

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QUARKTWIN TECHNOLOGY LTD

USA . 4,854 parts In-Stock

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4,854

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Northwest PG Solutions

USA . 2,319 parts In-Stock

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2,319

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Parana Technologies

USA . 1,875 parts In-Stock

1+ parts

-

100+ parts

$0.559

1k+ parts

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1,875

-

$0.559

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Alle Elektronik GmbH

Germany . 1,430 parts In-Stock

1+ parts

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1,430

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Native Components

USA . 844 parts In-Stock

1+ parts

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844

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Perfect Parts

USA . 467 parts In-Stock

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467

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Overview

Unlock unparalleled performance with the 2STA2120 from STMicroelectronics, a leading innovator in semiconductor technology. This robust PNP power BJT excels in switching applications, delivering reliability and efficiency for your projects. With its durable plastic/epoxy design, it operates seamlessly at high temperatures and powerful currents, ensuring optimal functionality. Elevate your designs and trust in STMicroelectronics' commitment to quality—where innovation meets excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and provides resistance against environmental factors, making this BJT suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration in circuits that require a negative signal input, offering versatility in design.

Configuration: SINGLE

A single configuration simplifies the design and integration process in circuits where only one transistor is needed.

Transistor Application: SWITCHING

Designed primarily for switching applications, this BJT is highly efficient for controlling electrical power in various electronic circuits.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on PCB layouts, facilitating better assembly and design.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust connections to the PCB, ensuring mechanical stability and reliable electrical contact.

No. of Terminals: 3

With three terminals, this BJT can be easily integrated into standard circuits, offering straightforward implementation.

Maximum Power Dissipation (Abs): 200 W

A high power dissipation rating allows this BJT to handle significant power loads, making it suitable for high-energy applications.

Package Style (Meter): FLANGE MOUNT

Flange mount design aids in secure installation to heat sinks or other structures, enhancing thermal management in high-power scenarios.

Minimum DC Current Gain (hFE): 35

A minimum DC current gain of 35 ensures adequate amplification in signal circuits, making this transistor a reliable choice.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this BJT can perform reliably under extreme conditions, increasing its application range.

Maximum Collector-Emitter Voltage: 250 V

The ability to handle up to 250 V enables this BJT to be used in applications requiring high voltage levels, enhancing its versatility.

Transistor Element Material: SILICON

Silicon as the base material ensures consistent performance and reliability in various electronic applications.

Maximum Collector Current (IC): 17 A

A maximum collector current of 17 A allows for substantial load handling, making this BJT suitable for robust applications.

Terminal Position: SINGLE

Single terminal positioning simplifies design considerations for PCB layouts, allowing for easier integration.

Nominal Transition Frequency (fT): 25 MHz

A transition frequency of 25 MHz supports high-speed switching applications, ensuring efficient operation in dynamic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STA2120 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2STA2120 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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