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2STA1837

STMicroelectronics

2STA1837 by STMicroelectronics

2STA1837 by STMicroelectronics is a PNP BJT designed for amplifier applications. It features a max collector-emitter voltage of 230V, a min DC current gain (hFE) of 100, and operates up to 150 °C. Its flange mount design ensures reliable performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,536 parts In-Stock

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7,536

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Digiode

USA . 3,338 parts In-Stock

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3,338

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Anansix

USA . 1,079 parts In-Stock

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1,079

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,425 parts In-Stock

1+ parts

$0.576

100+ parts

-

1k+ parts

$0.518

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1,425

$0.576

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$0.518

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MKK Technologies

India . 1,624 parts In-Stock

1+ parts

$1.083

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-

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1,624

$1.083

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DigiPath Technology Company

USA . 1,624 parts In-Stock

1+ parts

$1.083

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-

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1,624

$1.083

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AZTECH Wire

Italy . 1,214 parts In-Stock

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$17.110

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1,214

$17.110

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Alle Elektronik GmbH

Germany . 4,257 parts In-Stock

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4,257

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Corphita

USA . 3,481 parts In-Stock

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3,481

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Northwest PG Solutions

USA . 2,270 parts In-Stock

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2,270

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Parana Technologies

USA . 2,016 parts In-Stock

1+ parts

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100+ parts

$0.689

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2,016

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$0.689

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Native Components

USA . 878 parts In-Stock

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878

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Overview

Unlock superior performance with the 2STA1837 from STMicroelectronics, a trusted name in innovative semiconductor solutions. This PNP power transistor delivers exceptional amplification capabilities, ensuring reliability in diverse applications from audio systems to industrial controls. Engineered with high-quality materials, it guarantees durability and efficiency, making it the ideal choice for your next project. Experience the perfect blend of value and performance that drives your designs forward!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides durability and resilience, making this transistor suitable for various environmental conditions.

Polarity or Channel Type: PNP

This PNP configuration allows for versatile applications in amplifier circuits, enhancing signal processing capabilities.

Configuration: SINGLE

A single configuration simplifies integration into circuits, making it ideal for various amplifier applications.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this BJT ensures effective signal amplification, essential for audio and RF applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on PCBs, making it user-friendly for designers.

Terminal Form: THROUGH-HOLE

The through-hole terminal design provides robust mechanical support and ease of soldering on circuit boards.

No. of Terminals: 3

With three terminals, this transistor supports straightforward configuration and connection, simplifying circuit design.

Package Style (Meter): FLANGE MOUNT

The flange mount style ensures stable mounting and connections, particularly beneficial in high-vibration environments.

Minimum DC Current Gain (hFE): 100

A minimum DC current gain of 100 indicates good transistor performance, ensuring efficient signal amplification with low input power.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to function reliably in demanding environments without overheating.

Maximum Collector-Emitter Voltage: 230 V

A maximum collector-emitter voltage of 230V provides excellent voltage tolerance, making the product suitable for high-voltage applications.

Transistor Element Material: SILICON

Using silicon as the element material enhances the performance and reliability of the transistor in a wide range of electronic circuits.

Maximum Collector Current (IC): 1 A

The capability of handling a maximum collector current of 1A allows this transistor to support a variety of load types effectively.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures excellent solderability and reduces oxidation, enhancing connection reliability.

Terminal Position: SINGLE

A single terminal position simplifies layout and integration on printed circuit boards, improving design efficiency.

Case Connection: ISOLATED

An isolated case connection minimizes interference and enhances safety, particularly in sensitive electronic applications.

Nominal Transition Frequency (fT): 70 MHz

With a nominal transition frequency of 70 MHz, the transistor is suited for high-frequency applications, providing versatile performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STA1837 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

230 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2STA1837 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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