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2STA1695

STMicroelectronics

2STA1695 by STMicroelectronics

2STA1695 by STMicroelectronics is a PNP power BJT designed for amplifier applications. It features a max power dissipation of 100W, collector-emitter voltage of 140V, and operates up to 150 °C. Its through-hole design ensures easy integration into various electronic circuits.

Median Price

$1.400

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,023 parts In-Stock

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Digiode

USA . 2,776 parts In-Stock

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2,776

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Anansix

USA . 1,963 parts In-Stock

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1,963

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Zilex Electronics Inc.

Canada . 300 parts In-Stock

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300

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R&J Components

USA . 300 parts In-Stock

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300

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Bristol Electronics

USA . 90 parts In-Stock

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-

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$1.400

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90

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$1.400

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Dan-Mar Components

USA . 90 parts In-Stock

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90

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ACDS - Activité Composants Distribution Service

France . 60 parts In-Stock

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60

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 395 parts In-Stock

1+ parts

$0.053

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$0.051

395

$0.053

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$0.051

IDEA Electronic Components Group

UK . 1,855 parts In-Stock

1+ parts

$1.129

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$1.016

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1,855

$1.129

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$1.016

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MKK Technologies

India . 358 parts In-Stock

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$2.123

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358

$2.123

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DigiPath Technology Company

USA . 358 parts In-Stock

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$2.123

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358

$2.123

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AZTECH Wire

Italy . 794 parts In-Stock

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$8.320

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794

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Corphita

USA . 3,542 parts In-Stock

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Northwest PG Solutions

USA . 2,191 parts In-Stock

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Perfect Parts

USA . 556 parts In-Stock

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Parana Technologies

USA . 513 parts In-Stock

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$1.350

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513

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$1.350

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Overview

Unlock superior performance with the 2STA1695 from STMicroelectronics, a trusted leader in semiconductor innovation. This high-quality PNP power transistor excels in amplifier applications, delivering robust efficiency and reliability for diverse projects. Its durable plastic/epoxy construction ensures long-lasting operation even under challenging conditions. Choose the 2STA1695 to elevate your designs, streamline production, and experience unmatched support from a brand known for excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of Plastic/Epoxy for the package body ensures durability and resistance against environmental factors, making this product suitable for various applications.

Polarity or Channel Type: PNP

As a PNP transistor, it is ideal for high-side switching applications, providing flexibility in circuit design.

Configuration: SINGLE

The single configuration simplifies circuit design and integration into various electronic systems.

Transistor Application: AMPLIFIER

Designed for amplifier applications, it provides efficient signal amplification, making it perfect for audio and radio frequency applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and are easy to solder, ensuring reliable connections.

No. of Terminals: 3

The three-terminal design allows for easier integration into circuits, facilitating various configurations.

Maximum Power Dissipation (Abs): 100 W

With a maximum power dissipation of 100 W, this transistor can handle substantial loads, making it suitable for high-performance applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style enhances thermal management and stability, ensuring reliable operation in demanding environments.

Minimum DC Current Gain (hFE): 50

A minimum hFE of 50 indicates strong amplification capabilities, contributing to efficient circuit designs.

Maximum Operating Temperature: 150 °C

Operating at a maximum temperature of 150 °C ensures reliability and longevity in high-heat environments.

Maximum Collector-Emitter Voltage: 140 V

With a high collector-emitter voltage, the product is suitable for high-voltage applications, enhancing its versatility.

Transistor Element Material: SILICON

Silicon as the element material provides excellent electrical properties and stability under various conditions.

Maximum Collector Current (IC): 10 A

A maximum collector current of 10 A allows this transistor to drive heavy loads, making it suitable for power applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures good solderability and resistance to corrosion, enhancing the reliability of connections.

Terminal Position: SINGLE

A single terminal position simplifies design considerations and layout, facilitating easier circuit integration.

Maximum Time At Peak Reflow Temperature (s): 30

Allowing for a maximum reflow time of 30 seconds ensures reliable solder joints without compromising the component integrity during assembly.

Peak Reflow Temperature °C: 260

The capability to withstand peak reflow temperatures of up to 260 °C makes it compatible with modern soldering techniques.

Nominal Transition Frequency (fT): 20 MHz

A transition frequency of 20 MHz indicates the ability to operate effectively in high-frequency applications, providing versatility in usage.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STA1695 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2STA1695 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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