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FJAF4210

Onsemi

FJAF4210 by Onsemi

FJAF4210 by Onsemi is a PNP Power BJT with max. Vce of 140V, Ic of 10A, and hFE of 50. Ideal for amplifier applications due to its single configuration and silicon transistor element material. Operates up to 150 °C with a transition frequency of 30MHz in a through-hole package style.

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1k+

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Vyrian

USA . 2,152 parts In-Stock

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Digiode

USA . 1,254 parts In-Stock

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Andel Nordic

Denmark . 436 parts In-Stock

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$4.482

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$4.303

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Native Components

USA . 898 parts In-Stock

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$6.728

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TANS Electronics

Latvia . 4,555 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 3,028 parts In-Stock

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Problanco Electronics

Mexico . 2,292 parts In-Stock

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Supply Digital

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Corphita

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Northwest PG Solutions

USA . 1,177 parts In-Stock

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UHIMA Technologies

Türkiye . 806 parts In-Stock

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Corohmni

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Overview

Enhance your electronic projects with the FJAF4210 Power Bipolar Junction Transistor from Onsemi. Known for their high-quality components, Onsemi delivers reliable and efficient solutions for all your amplification needs. This PNP transistor is perfect for a wide range of applications, offering a maximum collector-emitter voltage of 140V and a maximum collector current of 10A. With a minimum DC current gain of 50 and a nominal transition frequency of 30 MHz, this transistor provides exceptional performance in a compact rectangular package. Trust Onsemi to deliver value, benefits, and advantages that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the transistor lightweight and durable, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into PNP circuit designs, making it a versatile choice for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easy to use in amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and reliability in amplification tasks.

Package Shape: RECTANGULAR

The rectangular package shape provides easy mounting and integration into circuit designs, saving space and improving efficiency.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for easy and secure soldering onto circuit boards, ensuring a reliable connection.

No. of Terminals: 3

With 3 terminals, this transistor offers the necessary connections for typical amplifier applications, ensuring compatibility and ease of use.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides stability and heat dissipation, making it suitable for high-power amplifier applications.

Minimum DC Current Gain (hFE): 50

The minimum DC current gain of 50 ensures reliable amplification performance and consistent output signals in amplifier circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, suitable for demanding amplifier applications.

Maximum Collector-Emitter Voltage: 140 V

The maximum collector-emitter voltage of 140V allows for high voltage amplification tasks, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material provides high performance and reliability in amplifier applications, ensuring longevity and efficiency.

Maximum Collector Current (IC): 10 A

With a maximum collector current of 10A, this transistor can handle high-power amplification tasks with ease, ensuring reliable performance.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection, ensuring ease of use in amplifier circuits.

Nominal Transition Frequency (fT): 30 MHz

The nominal transition frequency of 30MHz indicates the speed and bandwidth of the transistor, making it suitable for high-frequency amplifier applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJAF4210 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJAF4210 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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