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FJAF6810A

Onsemi

FJAF6810A by Onsemi

FJAF6810A by Onsemi is a NPN Power BJT with max. VCE of 750V, IC of 10A, and hFE of 5. Ideal for switching applications, it operates up to 150 °C in a single-terminal through-hole package style.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 1,529 parts In-Stock

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Digiode

USA . 1,327 parts In-Stock

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Native Components

USA . 288 parts In-Stock

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$57.199

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$54.911

288

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$54.911

Northwest PG Solutions

USA . 515 parts In-Stock

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$62.918

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SupplyDigital Components

Austria . 7,317 parts In-Stock

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Kulean Microsystems

USA . 4,755 parts In-Stock

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TANS Electronics

Latvia . 4,732 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,611 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,074 parts In-Stock

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Supply Digital

USA . 2,779 parts In-Stock

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Problanco Electronics

Mexico . 2,763 parts In-Stock

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Corphita

USA . 1,105 parts In-Stock

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UHIMA Technologies

Türkiye . 418 parts In-Stock

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Kepictronics

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Corohmni

South Africa . 75 parts In-Stock

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Overview

Upgrade your power with the FJAF6810A by Onsemi, a high-quality NPN Power BJT that offers unmatched performance in switching applications. Manufactured by Onsemi, a trusted leader in semiconductor technology, this transistor provides reliability and durability for your electronic projects. Whether you're looking to enhance the efficiency of your power supply or optimize motor control systems, the FJAF6810A delivers exceptional value with its high collector-emitter voltage, low DC current gain, and robust construction. Experience the advantages of superior performance and longevity with this versatile component from Onsemi.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifying and switching circuit applications, making this product versatile and suitable for various projects.

Configuration: SINGLE

Single configuration transistors are easy to integrate into circuits and provide a simple solution for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers efficient and reliable performance in controlling electrical signals.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and efficient use of space on a circuit board.

No. of Terminals: 3

With 3 terminals, this transistor simplifies the connection process in circuits, reducing the risk of errors during installation.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides a secure and stable mounting option for the transistor, ensuring reliability in operation.

Minimum DC Current Gain (hFE): 5

A minimum DC current gain of 5 indicates efficient amplification of input signals, resulting in accurate and reliable performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments, making it suitable for a wide range of applications.

Maximum Collector-Emitter Voltage: 750 V

The high maximum collector-emitter voltage of 750V allows this transistor to handle high voltages, increasing its versatility in different circuit designs.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, ensuring stable operation and longevity in various electronic devices.

Maximum Collector Current (IC): 10 A

With a maximum collector current of 10A, this transistor can handle high currents, making it suitable for applications that require power switching.

Terminal Position: SINGLE

Single terminal position simplifies the connection process in circuits, reducing the risk of errors during installation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJAF6810A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

750 V

Configuration:

Minimum DC Current Gain (hFE):

5

JESD-30 Code:

R-XSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FJAF6810A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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