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FJAF4210YTU

Onsemi

FJAF4210YTU by Onsemi

FJAF4210YTU by Onsemi is a PNP Power BJT with 140V VCE, 10A IC, and 80W power dissipation. Ideal for amplifier applications, it has a min hFE of 90 and operates up to 150 °C. The transistor's silicon element and through-hole terminal make it suitable for various electronic designs.

Median Price

$1.613

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,313 parts In-Stock

1+ parts

-

100+ parts

$1.560

1k+ parts

$1.290

10k+ parts

$1.150

3,313

-

$1.560

$1.290

$1.150

DigiKey

USA . 2,160 parts In-Stock

1+ parts

-

100+ parts

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$1.950

10k+ parts

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2,160

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-

$1.950

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Verical

USA . 2,160 parts In-Stock

1+ parts

-

100+ parts

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$1.613

10k+ parts

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2,160

-

-

$1.613

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,847 parts In-Stock

1+ parts

$1.170

100+ parts

-

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1,847

$1.170

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Digiode

USA . 2,185 parts In-Stock

1+ parts

$1.216

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2,185

$1.216

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DigiKey Marketplace

USA . 2,160 parts In-Stock

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2,160

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Distributors (Availability)

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Corphita

USA . 1,714 parts In-Stock

1+ parts

$1.152

100+ parts

-

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1,714

$1.152

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-

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Corohmni

South Africa . 118 parts In-Stock

1+ parts

$1.170

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118

$1.170

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Component Stockers USA

USA . 2,868 parts In-Stock

1+ parts

$1.290

100+ parts

$1.220

1k+ parts

$1.100

10k+ parts

-

2,868

$1.290

$1.220

$1.100

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Northwest PG Solutions

USA . 471 parts In-Stock

1+ parts

$3.421

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471

$3.421

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Microchip USA

USA . 2,755 parts In-Stock

1+ parts

$7.995

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2,755

$7.995

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SupplyDigital Components

Austria . 5,035 parts In-Stock

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5,035

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A-Z Elektronik GmbH

Germany . 4,508 parts In-Stock

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4,508

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Kulean Microsystems

USA . 4,161 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,005 parts In-Stock

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Continental Prestige Electronics

USA . 2,160 parts In-Stock

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$1.170

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Supply Digital

USA . 1,433 parts In-Stock

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TANS Electronics

Latvia . 1,020 parts In-Stock

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1,020

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Native Components

USA . 955 parts In-Stock

1+ parts

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$3.017

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955

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$3.017

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UHIMA Technologies

Türkiye . 768 parts In-Stock

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768

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Problanco Electronics

Mexico . 492 parts In-Stock

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492

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Overview

Unleash the power of innovation with the FJAF4210YTU by Onsemi. Known for their top-notch quality and reliability, Onsemi has created a Power Bipolar Junction Transistor (BJT) that is perfect for amplifier applications. With a maximum power dissipation of 80W and a maximum collector-emitter voltage of 140V, this PNP transistor offers unparalleled performance. The FJAF4210YTU's single configuration and rectangular package shape make it easy to use, while its high minimum DC current gain of 90 ensures optimal efficiency. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and cost-effective, making the transistor easy to handle and affordable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifiers and switching circuits, offering good performance for audio applications.

Configuration: SINGLE

Single configuration transistors are simple to use and are suitable for basic amplification tasks.

Transistor Application: AMPLIFIER

Designed specifically for amplification tasks, ensuring high-quality signal processing for audio or RF signals.

Maximum Power Dissipation (Abs): 80 W

With a high power dissipation rating, this transistor can handle significant power levels without overheating, making it suitable for demanding applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to operate reliably in a wide range of environments, increasing its versatility.

Maximum Collector-Emitter Voltage: 140 V

The high voltage rating ensures that the transistor can handle high voltage signals, making it suitable for various amplifier and switching applications.

Maximum Collector Current (IC): 10 A

The high collector current rating allows the transistor to handle larger currents, making it suitable for power amplification tasks.

Nominal Transition Frequency (fT): 30 MHz

With a high transition frequency, this transistor can switch rapidly between on and off states, making it suitable for high-frequency applications such as RF amplifiers.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJAF4210YTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

90

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJAF4210YTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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