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FJAF4310O

Onsemi

FJAF4310O by Onsemi

FJAF4310O by Onsemi is a NPN Power BJT with max VCEsat of 0.5V, IC of 10A, and Ptot of 80W. Ideal for amplifier applications due to its high hFE (70) and fT of 30MHz. Its package style is flange mount with isolated case connection.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 3,118 parts In-Stock

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Digiode

USA . 1,374 parts In-Stock

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Native Components

USA . 520 parts In-Stock

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$25.654

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Northwest PG Solutions

USA . 1,315 parts In-Stock

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$25.397

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Kulean Microsystems

USA . 6,837 parts In-Stock

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SupplyDigital Components

Austria . 6,798 parts In-Stock

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TANS Electronics

Latvia . 5,517 parts In-Stock

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Problanco Electronics

Mexico . 2,741 parts In-Stock

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Corphita

USA . 1,775 parts In-Stock

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UHIMA Technologies

Türkiye . 902 parts In-Stock

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Supply Digital

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Corohmni

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Overview

Experience the power and reliability of the FJAF4310O from Onsemi, a leading manufacturer in the industry. As part of the Power Bipolar Junction Transistors (BJT) category, this NPN transistor offers exceptional performance as an amplifier. With a maximum VCEsat of just 0.5 V and a maximum power dissipation of 80 W, this product is designed to deliver superior results. Whether you're looking to enhance your audio systems or improve your electronic devices, the FJAF4310O provides the value, benefits, and advantages that customers need. Trust in Onsemi for quality components that elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material : PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type : NPN

Commonly used configuration, making it compatible with a wide range of circuits and applications.

Configuration : SINGLE

Simplifies circuit design and integration, making it easier to implement in various amplifier applications.

Transistor Application : AMPLIFIER

Specifically designed for amplifier applications, providing optimal performance and efficiency in amplifying signals.

Maximum VCEsat : 0.5 V

Low saturation voltage helps reduce power loss and improve efficiency in amplifier circuits.

Package Shape : RECTANGULAR

Compact and space-saving design, suitable for applications where size constraints are a concern.

Terminal Form : THROUGH-HOLE

Easy to solder and mount on PCBs, ensuring secure connections and reliability in various environments.

Maximum Power Dissipation (Abs) : 80 W

High power handling capability allows for robust performance in amplifier circuits without overheating or failure.

Package Style (Meter) : FLANGE MOUNT

Flange mount design provides easy installation and secure mounting, suitable for industrial or high-power applications.

Minimum DC Current Gain (hFE) : 70

Good current gain ensures stable and consistent performance in amplifier applications.

Maximum Operating Temperature : 150 °C

Wide temperature range allows for reliable operation in various environmental conditions without performance degradation.

Maximum Collector-Emitter Voltage : 140 V

High breakdown voltage rating provides protection and reliability in amplifier circuits with high voltage requirements.

Transistor Element Material : SILICON

Silicon material offers good performance characteristics in terms of current handling, temperature stability, and frequency response.

Maximum Collector Current (IC) : 10 A

High collector current rating allows for handling higher current loads in amplifier circuits without risking overheating or failure.

Terminal Position : SINGLE

Simplified terminal design for easy installation and connection, reducing complexity in circuit design.

Case Connection : ISOLATED

Isolated case connection helps prevent interference and provides better protection against accidental short circuits.

Nominal Transition Frequency (fT) : 30 MHz

High transition frequency allows for fast response and high-speed amplification of signals in amplifier circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJAF4310O attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

FJAF4310O Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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