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FJAF4210OTU

Onsemi

FJAF4210OTU by Onsemi

FJAF4210OTU by Onsemi is a PNP Power BJT with 80W power dissipation, 140V max collector-emitter voltage, and 10A max collector current. Ideal for amplifier applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers a min hFE of 70 and fT of 30MHz.

Median Price

$1.580

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 150 parts In-Stock

1+ parts

$1.369

100+ parts

$1.246

1k+ parts

$1.123

10k+ parts

-

150

$1.369

$1.246

$1.123

-

Rochester

USA . 1,591 parts In-Stock

1+ parts

-

100+ parts

$1.580

1k+ parts

$1.310

10k+ parts

$1.170

1,591

-

$1.580

$1.310

$1.170

DigiKey

USA . 1,591 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.980

10k+ parts

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1,591

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-

$1.980

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Flip Electronics (Authorized)

USA . 1,384 parts In-Stock

1+ parts

-

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1,384

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Verical

USA . 1,231 parts In-Stock

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-

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$1.637

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1,231

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$1.637

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Farnell

UK . 1,037 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$1.390

10k+ parts

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1,037

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$1.390

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,361 parts In-Stock

1+ parts

$1.226

100+ parts

-

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2,361

$1.226

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Vyrian

USA . 1,743 parts In-Stock

1+ parts

$1.290

100+ parts

-

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1,743

$1.290

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DigiKey Marketplace

USA . 1,440 parts In-Stock

1+ parts

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1,440

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Flip Electronics

USA . 1,384 parts In-Stock

1+ parts

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100+ parts

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1,384

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,424 parts In-Stock

1+ parts

$1.161

100+ parts

-

1k+ parts

-

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1,424

$1.161

-

-

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Corohmni

South Africa . 447 parts In-Stock

1+ parts

$1.290

100+ parts

-

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10k+ parts

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447

$1.290

-

-

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Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$1.369

100+ parts

$1.246

1k+ parts

$1.123

10k+ parts

-

150

$1.369

$1.246

$1.123

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Ampacity Inc.

Singapore . 861 parts In-Stock

1+ parts

$2.390

100+ parts

-

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861

$2.390

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QUARKTWIN TECHNOLOGY LTD

USA . 28,359 parts In-Stock

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28,359

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TANS Electronics

Latvia . 8,177 parts In-Stock

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8,177

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Problanco Electronics

Mexico . 7,229 parts In-Stock

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Microchip USA

USA . 6,746 parts In-Stock

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SupplyDigital Components

Austria . 6,098 parts In-Stock

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6,098

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Kulean Microsystems

USA . 4,404 parts In-Stock

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Assy Fe

Spain . 4,067 parts In-Stock

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Northwest PG Solutions

USA . 1,266 parts In-Stock

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Supply Digital

USA . 1,097 parts In-Stock

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1,097

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Continental Prestige Electronics

USA . 1,037 parts In-Stock

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$1.390

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1,037

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$1.390

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Native Components

USA . 922 parts In-Stock

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922

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UHIMA Technologies

Türkiye . 570 parts In-Stock

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570

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Perfect Parts

USA . 2 parts In-Stock

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2

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Overview

Elevate your projects with the FJAF4210OTU by Onsemi, a top-quality Power Bipolar Junction Transistor that exceeds industry standards. Manufactured by Onsemi, a renowned leader in semiconductor technology, this PNP transistor offers unparalleled performance and reliability for amplifier applications. With a maximum power dissipation of 80W and a maximum collector current of 10A, this transistor is designed to handle your most demanding tasks effortlessly. Upgrade your designs with the FJAF4210OTU and experience the difference in quality and efficiency that Onsemi brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration into existing PNP circuit designs.

Configuration: SINGLE

Simplified design and installation process.

Transistor Application: AMPLIFIER

Ideal for amplifying signals with high fidelity and efficiency.

Package Shape: RECTANGULAR

Optimal for space-saving and organized circuit layouts.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering onto PCBs.

Maximum Power Dissipation (Abs): 80 W

Can handle high power dissipation, making it suitable for power applications.

No. of Terminals: 3

Simplified connection setup.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for various operating environments.

Maximum Collector-Emitter Voltage: 140 V

Can handle high voltage levels, making it versatile for different voltage requirements.

Transistor Element Material: SILICON

Provides reliability and consistent performance.

Maximum Collector Current (IC): 10 A

Capable of handling high current levels for power applications.

Terminal Finish: MATTE TIN

Provides good solderability and corrosion resistance.

Terminal Position: SINGLE

Simplified connection setup.

Nominal Transition Frequency (fT): 30 MHz

Suitable for high-frequency applications such as RF amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJAF4210OTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJAF4210OTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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