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FJAF4310YTU

Onsemi

FJAF4310YTU by Onsemi

FJAF4310YTU by Onsemi is a NPN Power BJT with 80W power dissipation, 140V max collector-emitter voltage, and 10A max collector current. Ideal for amplifier applications due to its 30MHz transition frequency and single configuration in a rectangular package with through-hole terminals.

Median Price

$1.665

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 185 parts In-Stock

1+ parts

-

100+ parts

$1.480

1k+ parts

$1.230

10k+ parts

$1.100

185

-

$1.480

$1.230

$1.100

DigiKey

USA . 185 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.850

10k+ parts

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185

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-

$1.850

-

Distributors (In-Stock)

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Digiode

USA . 2,114 parts In-Stock

1+ parts

$1.150

100+ parts

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2,114

$1.150

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Vyrian

USA . 3,420 parts In-Stock

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3,420

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DigiKey Marketplace

USA . 558 parts In-Stock

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558

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Distributors (Availability)

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Corohmni

South Africa . 204 parts In-Stock

1+ parts

$0.998

100+ parts

-

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204

$0.998

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Corphita

USA . 509 parts In-Stock

1+ parts

$1.089

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-

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509

$1.089

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Component Stockers USA

USA . 25 parts In-Stock

1+ parts

$1.220

100+ parts

$1.150

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-

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25

$1.220

$1.150

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Microchip USA

USA . 9,286 parts In-Stock

1+ parts

$7.540

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9,286

$7.540

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Native Components

USA . 242 parts In-Stock

1+ parts

$26.840

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242

$26.840

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Northwest PG Solutions

USA . 532 parts In-Stock

1+ parts

$29.524

100+ parts

$26.572

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532

$29.524

$26.572

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SupplyDigital Components

Austria . 6,907 parts In-Stock

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6,907

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Kulean Microsystems

USA . 5,678 parts In-Stock

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5,678

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A-Z Elektronik GmbH

Germany . 4,614 parts In-Stock

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Problanco Electronics

Mexico . 4,529 parts In-Stock

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4,529

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Alle Elektronik GmbH

Germany . 3,076 parts In-Stock

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3,076

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Supply Digital

USA . 2,295 parts In-Stock

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TANS Electronics

Latvia . 809 parts In-Stock

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809

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UHIMA Technologies

Türkiye . 223 parts In-Stock

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Continental Prestige Electronics

USA . 30 parts In-Stock

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30

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Overview

Experience the superior quality and reliability of the FJAF4310YTU by Onsemi, a leading manufacturer in the industry of Power Bipolar Junction Transistors. Perfect for amplifier applications, this NPN transistor offers a maximum power dissipation of 80W and a minimum DC current gain of 90, providing exceptional performance and efficiency. With a maximum operating temperature of 150 °C and a maximum collector-emitter voltage of 140V, this transistor is ideal for a wide range of electronic projects. Trust in Onsemi's expertise and innovation to bring you top-notch products that deliver value and benefits beyond compare.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate into various electronic systems.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in audio or signal processing circuits.

Package Shape: RECTANGULAR

The rectangular shape offers easy mounting and compact placement within electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and stable connection, ideal for applications where reliability is crucial.

Maximum Power Dissipation (Abs): 80 W

With a high power dissipation capacity, this transistor can handle larger power loads without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount design allows for easy installation and heat dissipation, perfect for high-power applications.

Minimum DC Current Gain (hFE): 90

A high DC current gain ensures efficient amplification and signal processing, making this transistor reliable in amplifier circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 140 V

The high collector-emitter voltage rating allows for use in applications that require higher voltage handling capabilities.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material that ensures stable and consistent performance.

Maximum Collector Current (IC): 10 A

A high maximum collector current rating enables this transistor to handle larger current loads without damage.

Terminal Finish: TIN

Tin terminal finish provides excellent conductivity and solderability, ensuring a reliable electrical connection.

Terminal Position: SINGLE

Single terminal positioning simplifies installation and makes it easier to integrate into various circuit layouts.

Nominal Transition Frequency (fT): 30 MHz

With a high transition frequency, this transistor can operate at higher frequencies, making it suitable for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJAF4310YTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

90

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJAF4310YTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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