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FJAF6810TU

Onsemi

FJAF6810TU by Onsemi

FJAF6810TU by Onsemi is a NPN Power BJT with max. collector-emitter voltage of 750V, max. collector current of 10A, and min. DC current gain of 5. Ideal for switching applications in various industries due to its single configuration and isolated case connection in a rectangular package style.

Median Price

$1.563

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 720 parts In-Stock

1+ parts

-

100+ parts

$1.320

1k+ parts

$1.180

10k+ parts

$1.110

720

-

$1.320

$1.180

$1.110

DigiKey

USA . 720 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.740

10k+ parts

-

720

-

-

$1.740

-

Verical

USA . 720 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.563

10k+ parts

-

720

-

-

$1.563

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,776 parts In-Stock

1+ parts

$1.210

100+ parts

-

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2,776

$1.210

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Digiode

USA . 2,449 parts In-Stock

1+ parts

$1.396

100+ parts

-

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2,449

$1.396

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DigiKey Marketplace

USA . 720 parts In-Stock

1+ parts

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720

-

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Distributors (Availability)

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Corohmni

South Africa . 112 parts In-Stock

1+ parts

$1.210

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-

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112

$1.210

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Corphita

USA . 2,892 parts In-Stock

1+ parts

$1.323

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2,892

$1.323

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Microchip USA

USA . 9,467 parts In-Stock

1+ parts

$9.165

100+ parts

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9,467

$9.165

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Native Components

USA . 785 parts In-Stock

1+ parts

$126.514

100+ parts

-

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$121.453

785

$126.514

-

-

$121.453

Northwest PG Solutions

USA . 9 parts In-Stock

1+ parts

$139.165

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9

$139.165

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Problanco Electronics

Mexico . 8,028 parts In-Stock

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8,028

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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TANS Electronics

Latvia . 1,611 parts In-Stock

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Supply Digital

USA . 1,120 parts In-Stock

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Kulean Microsystems

USA . 849 parts In-Stock

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849

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Continental Prestige Electronics

USA . 720 parts In-Stock

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$1.330

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720

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$1.330

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Perfect Parts

USA . 569 parts In-Stock

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569

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UHIMA Technologies

Türkiye . 412 parts In-Stock

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412

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SupplyDigital Components

Austria . 142 parts In-Stock

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142

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Overview

Experience the power of reliability with the FJAF6810TU by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and performance with this Power Bipolar Junction Transistor (BJT). Ideal for switching applications, this NPN transistor offers exceptional value and benefits to customers seeking a durable and efficient solution. With a maximum collector-emitter voltage of 750V and a maximum collector current of 10A, this transistor is designed to meet your needs with ease. Trust Onsemi to provide you with the best in power transistor technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and durability, making the transistor suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering high efficiency and reliability.

Configuration: SINGLE

A single configuration simplifies circuit design and makes the transistor easy to use in various electronic systems.

Transistor Application: SWITCHING

Designed for efficient switching operations, making it suitable for power control applications.

Package Shape: RECTANGULAR

The rectangular shape offers easy mounting and integration into circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide good mechanical strength and solder joint reliability.

No. of Terminals: 3

Simple 3-terminal design for easy connection in circuits.

Package Style (Meter): FLANGE MOUNT

Flange mount style allows for secure mounting on heat sinks or other surfaces.

Minimum DC Current Gain (hFE): 5

Provides sufficient gain for proper amplification and signal processing.

Maximum Operating Temperature: 150 °C

Can safely operate at high temperatures, ensuring reliability in demanding environments.

Maximum Collector-Emitter Voltage: 750 V

High voltage handling capability for power applications.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor fabrication.

Maximum Collector Current (IC): 10 A

Supports high current applications with ease.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides good solderability and corrosion resistance.

Terminal Position: SINGLE

Single terminal position simplifies connections and reduces chances of error in circuit assembly.

Case Connection: ISOLATED

Isolated case connection enhances safety and prevents electrical interference.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJAF6810TU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

750 V

Configuration:

Minimum DC Current Gain (hFE):

5

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FJAF6810TU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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