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FJAF4310OTU

Onsemi

FJAF4310OTU by Onsemi

FJAF4310OTU by Onsemi is a NPN Power BJT with 80W power dissipation, 140V max collector-emitter voltage, and 10A max collector current. Ideal for amplifier applications, it has a min hFE of 70 and operates up to 150°C. The transistor features a silicon element in a rectangular package with through-hole terminals.

Median Price

$1.632

Lifecycle Status

EOL

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,744 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.340

10k+ parts

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1,744

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-

$1.340

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Flip Electronics (Authorized)

USA . 1,744 parts In-Stock

1+ parts

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1,744

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Rochester

USA . 696 parts In-Stock

1+ parts

-

100+ parts

$1.450

1k+ parts

$1.300

10k+ parts

$1.220

696

-

$1.450

$1.300

$1.220

Verical

USA . 460 parts In-Stock

1+ parts

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$1.813

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460

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$1.813

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Farnell

UK . 335 parts In-Stock

1+ parts

-

100+ parts

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$1.870

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335

-

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$1.870

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,744 parts In-Stock

1+ parts

$1.340

100+ parts

-

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2,744

$1.340

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Digiode

USA . 642 parts In-Stock

1+ parts

$1.520

100+ parts

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642

$1.520

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Flip Electronics

USA . 1,744 parts In-Stock

1+ parts

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100+ parts

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1,744

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DigiKey Marketplace

USA . 1,440 parts In-Stock

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1,440

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Distributors (Availability)

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Corohmni

South Africa . 303 parts In-Stock

1+ parts

$1.340

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303

$1.340

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Corphita

USA . 2,364 parts In-Stock

1+ parts

$1.440

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2,364

$1.440

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Native Components

USA . 564 parts In-Stock

1+ parts

$96.582

100+ parts

-

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10k+ parts

$92.719

564

$96.582

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-

$92.719

Northwest PG Solutions

USA . 744 parts In-Stock

1+ parts

$106.240

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744

$106.240

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Assy Fe

Spain . 9,475 parts In-Stock

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9,475

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Problanco Electronics

Mexico . 7,244 parts In-Stock

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7,244

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Microchip USA

USA . 5,796 parts In-Stock

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5,796

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Supply Digital

USA . 2,361 parts In-Stock

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2,361

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Kulean Microsystems

USA . 2,198 parts In-Stock

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2,198

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TANS Electronics

Latvia . 1,712 parts In-Stock

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1,712

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Continental Prestige Electronics

USA . 360 parts In-Stock

1+ parts

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$1.870

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360

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$1.870

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SupplyDigital Components

Austria . 227 parts In-Stock

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227

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UHIMA Technologies

Türkiye . 22 parts In-Stock

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22

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Overview

Unleash the power of innovation with the FJAF4310OTU by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors (BJT) like no other. This NPN transistor is perfect for amplifier applications, offering a wide range of benefits such as high power dissipation, reliable performance, and a maximum collector current of 10A. With its robust construction and exceptional thermal management, this transistor ensures optimal efficiency even in the most demanding environments. Elevate your projects with the FJAF4310OTU and experience unmatched reliability and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides good insulation and protection for the transistor, ensuring reliable performance and durability.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification purposes, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into various electronic devices.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in audio or signal amplification circuits.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and soldering onto a PCB, making it convenient for production processes.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering, ensuring reliable electrical connections.

Maximum Power Dissipation (Abs): 80 W

High power dissipation capacity of 80W allows the transistor to handle large amounts of power without overheating, making it suitable for high-power applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides mechanical stability and easy mounting on heatsinks or other components, improving heat dissipation.

Minimum DC Current Gain (hFE): 70

Minimum DC current gain of 70 ensures consistent amplification performance in various operating conditions.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C ensures stable performance even in demanding temperature environments.

Maximum Collector-Emitter Voltage: 140 V

High maximum collector-emitter voltage of 140V enables the transistor to handle high voltage levels, suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon material provides high reliability and performance, making the transistor suitable for long-term use.

Maximum Collector Current (IC): 10 A

High maximum collector current of 10A allows the transistor to handle large current loads, making it suitable for high-power applications.

Terminal Finish: MATTE TIN

Matte Tin terminal finish ensures good solderability and electrical conductivity, making it easy to solder the transistor onto a PCB.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and PCB layout, making it easier to integrate into electronic devices.

Nominal Transition Frequency (fT): 30 MHz

High nominal transition frequency of 30MHz ensures fast switching speeds, making the transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJAF4310OTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJAF4310OTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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