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FJAF6810

Onsemi

FJAF6810 by Onsemi

FJAF6810 by Onsemi is a NPN Power BJT with max VCEsat of 3V, IC of 10A, and Pmax of 60W. Ideal for switching applications due to its fast tf of 200ns and toff of 3200ns. Package style is flange mount with isolated case connection.

Median Price

$14.700

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Forefront Electronics and Design

USA . 10 parts In-Stock

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$14.700

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Digiode

USA . 3,319 parts In-Stock

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Vyrian

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LittleDiode

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Corohmni

South Africa . 57 parts In-Stock

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Native Components

USA . 240 parts In-Stock

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$20.260

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Northwest PG Solutions

USA . 2,075 parts In-Stock

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$22.286

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$20.057

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A-Z Elektronik GmbH

Germany . 7,478 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,985 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 2,505 parts In-Stock

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Problanco Electronics

Mexico . 2,378 parts In-Stock

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Kulean Microsystems

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TANS Electronics

Latvia . 1,867 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 866 parts In-Stock

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Kepictronics

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Assy Fe

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Overview

Discover the power and efficiency of the FJAF6810 by Onsemi, a high-quality Power Bipolar Junction Transistor (BJT) designed for switching applications. Manufactured with precision and expertise, this NPN transistor offers a maximum collector-emitter voltage of 750V and a maximum collector current of 10A. With a package style of flange mount and a package body material of plastic/epoxy, this transistor provides reliable performance and durability. Ideal for various electronic projects, the FJAF6810 ensures optimal functionality and value for customers seeking a superior transistor solution. Experience the benefits of this cutting-edge technology and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability and insulating properties for the transistor.

Polarity or Channel Type: NPN

Commonly used for general purpose switching applications, providing versatility.

Configuration: SINGLE

Simplifies circuit design and integration.

Transistor Application: SWITCHING

Optimized for efficient switching operations.

Maximum VCEsat: 3 V

Low VCEsat helps in minimizing power loss during operation.

Package Shape: RECTANGULAR

Easily mountable and fits well in circuit layouts.

Terminal Form: THROUGH-HOLE

Enables easy soldering and connection to other components.

Maximum Fall Time (tf): 200 ns

Fast switching speed for quick response in applications.

No. of Terminals: 3

Simple connection setup for ease of use.

Maximum Power Dissipation (Abs): 60 W

Can handle high power loads effectively.

Package Style (Meter): FLANGE MOUNT

Allows for secure and stable mounting in system designs.

Minimum DC Current Gain (hFE): 5

Provides sufficient current gain for various applications.

Maximum Operating Temperature: 150 °C

Capable of operating in high temperature environments.

Maximum Collector-Emitter Voltage: 750 V

Suitable for high voltage applications.

Transistor Element Material: SILICON

Highly reliable and widely used semiconductor material.

Maximum Collector Current (IC): 10 A

Can handle high current levels for diverse applications.

Maximum Turn Off Time (toff): 3200 ns

Allows for controlled turn-off timings in switching operations.

Terminal Position: SINGLE

Simplified connection setup for convenience.

Case Connection: ISOLATED

Helps in preventing electrical interference and ensures safety.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJAF6810 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

750 V

Configuration:

Minimum DC Current Gain (hFE):

5

Maximum Fall Time (tf):

200 ns

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

3200 ns

Maximum VCEsat:

3 V

Trade Compliance

FJAF6810 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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