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FJAF6810ATU

Onsemi

FJAF6810ATU by Onsemi

FJAF6810ATU by Onsemi is a NPN Power BJT with max. collector-emitter voltage of 750V, ideal for switching applications. It has a max. collector current of 10A and min DC current gain of 5, operating up to 150°C. This transistor comes in a rectangular package style with flange mount suitable for through-hole mounting.

Median Price

$1.131

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 805 parts In-Stock

1+ parts

-

100+ parts

$1.110

1k+ parts

$0.921

10k+ parts

$0.821

805

-

$1.110

$0.921

$0.821

Verical

USA . 720 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.152

10k+ parts

$1.027

720

-

-

$1.152

$1.027

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 376 parts In-Stock

1+ parts

$0.864

100+ parts

-

1k+ parts

-

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-

376

$0.864

-

-

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Vyrian

USA . 2,445 parts In-Stock

1+ parts

$0.910

100+ parts

-

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-

10k+ parts

-

2,445

$0.910

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 559 parts In-Stock

1+ parts

$0.819

100+ parts

-

1k+ parts

-

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-

559

$0.819

-

-

-

Corohmni

South Africa . 161 parts In-Stock

1+ parts

$0.910

100+ parts

-

1k+ parts

-

10k+ parts

-

161

$0.910

-

-

-

Native Components

USA . 824 parts In-Stock

1+ parts

$60.926

100+ parts

-

1k+ parts

-

10k+ parts

$58.489

824

$60.926

-

-

$58.489

Northwest PG Solutions

USA . 1,365 parts In-Stock

1+ parts

$67.018

100+ parts

-

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-

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1,365

$67.018

-

-

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Kulean Microsystems

USA . 5,893 parts In-Stock

1+ parts

-

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5,893

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-

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Problanco Electronics

Mexico . 5,419 parts In-Stock

1+ parts

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5,419

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SupplyDigital Components

Austria . 5,213 parts In-Stock

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5,213

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TANS Electronics

Latvia . 1,274 parts In-Stock

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1,274

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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Supply Digital

USA . 840 parts In-Stock

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840

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Continental Prestige Electronics

USA . 805 parts In-Stock

1+ parts

-

100+ parts

$1.090

1k+ parts

-

10k+ parts

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805

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$1.090

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Perfect Parts

USA . 436 parts In-Stock

1+ parts

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436

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UHIMA Technologies

Türkiye . 59 parts In-Stock

1+ parts

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59

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Overview

Enhance your power control with the FJAF6810ATU by Onsemi, a top-quality NPN Power Bipolar Junction Transistor that guarantees reliability and efficiency. Manufactured by industry leader Onsemi, this transistor is perfect for switching applications, offering seamless performance and durability. The rectangular flange mount package ensures easy installation, making it ideal for a wide range of electronic projects. Experience the value and benefits of this transistor as it delivers consistent and precise power control, providing you with the edge you need to excel in your applications. Upgrade your power management solutions with the FJAF6810ATU and witness the difference in performance today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the transistor, making it a reliable choice for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering versatility in circuit design.

Configuration: SINGLE

Single configuration simplifies circuit design and installation, making it easier to use in different applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance when turning on and off electrical signals.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and integration into various electronic devices and circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly, ensuring reliable electrical connections.

No. of Terminals: 3

Having 3 terminals simplifies circuit connections and makes it easy to integrate into different electronic designs.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for secure mounting of the transistor in electronic devices, ensuring stability and reliability.

Minimum DC Current Gain (hFE): 5

Minimum DC current gain of 5 ensures consistent performance and amplification in various circuit applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, making it suitable for demanding environments.

Maximum Collector-Emitter Voltage: 750 V

High maximum collector-emitter voltage of 750V allows for handling of higher voltage signals, expanding the range of applications where this transistor can be used.

Transistor Element Material: SILICON

Silicon transistor element material provides high performance and reliability in electronic circuits, ensuring efficient signal amplification and switching.

Maximum Collector Current (IC): 10 A

With a maximum collector current of 10A, this transistor can handle high current loads, making it suitable for power applications.

Terminal Finish: Matte Tin (Sn)

Matte tin terminal finish provides corrosion resistance and reliable electrical connections, ensuring long-term performance of the transistor.

Terminal Position: SINGLE

Single terminal position simplifies circuit integration and connections, making it easy to use in different electronic designs.

Case Connection: ISOLATED

Isolated case connection helps prevent electrical interference and ensures safety in circuit applications, making this transistor a reliable choice for various electronic devices.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJAF6810ATU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

750 V

Configuration:

Minimum DC Current Gain (hFE):

5

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FJAF6810ATU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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