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FJAF4210O

Onsemi

FJAF4210O by Onsemi

FJAF4210O by Onsemi is a PNP BJT transistor with max VCEsat of 0.5V, IC of 10A, and hFE of 70. Ideal for amplifier applications, it has a max power dissipation of 80W and operates up to 150 °C. Its package style is flange mount with isolated case connection in a rectangular shape.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,830 parts In-Stock

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Digiode

USA . 1,420 parts In-Stock

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Native Components

USA . 668 parts In-Stock

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$6.830

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TANS Electronics

Latvia . 5,153 parts In-Stock

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SupplyDigital Components

Austria . 5,147 parts In-Stock

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Problanco Electronics

Mexico . 3,972 parts In-Stock

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Supply Digital

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Northwest PG Solutions

USA . 1,899 parts In-Stock

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Corphita

USA . 916 parts In-Stock

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Corohmni

South Africa . 190 parts In-Stock

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UHIMA Technologies

Türkiye . 145 parts In-Stock

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Kulean Microsystems

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Overview

Elevate your amplifier performance with the FJAF4210O by Onsemi. As a leading manufacturer in power bipolar junction transistors, Onsemi delivers top-quality products designed for efficiency and reliability. Ideal for amplification applications, this PNP transistor offers a maximum VCEsat of 0.5V and a maximum collector current of 10A. With a minimum DC current gain of 70 and a maximum power dissipation of 80W, the FJAF4210O ensures optimal performance and durability. Upgrade your electronics with Onsemi's innovative technology and experience superior quality and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design and reduces complexity, making it easier to integrate into various electronic systems.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring high-quality signal output and efficient performance.

Maximum VCEsat: 0.5 V

Low saturation voltage minimizes power loss and heat generation, enhancing overall efficiency.

Terminal Form: THROUGH-HOLE

Facilitates easy installation and soldering onto PCBs, making it convenient for assembly in electronic devices.

Maximum Power Dissipation (Abs): 80 W

Capable of handling high power levels, suitable for demanding applications where power dissipation is crucial.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting and heat dissipation, ensuring stable operation even under high temperature conditions.

Minimum DC Current Gain (hFE): 70

Ensures reliable amplification with a minimum gain level, guaranteeing consistent performance in various operating conditions.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures without performance degradation, suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 140 V

Can withstand high voltage levels, making it suitable for circuits where voltage handling capabilities are essential.

Transistor Element Material: SILICON

Provides high reliability and performance stability, ensuring consistent operation over extended periods.

Maximum Collector Current (IC): 10 A

Capable of handling high currents, suitable for applications requiring robust current flow.

Terminal Position: SINGLE

Simplifies circuit layout and connection, making it easier to integrate into electronic systems.

Case Connection: ISOLATED

Prevents electrical interference and crosstalk, ensuring signal integrity and stable operation in complex circuits.

Nominal Transition Frequency (fT): 30 MHz

Provides high frequency response, making it suitable for RF and high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJAF4210O attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

FJAF4210O Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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