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FJAF4310Y

Onsemi

FJAF4310Y by Onsemi

FJAF4310Y by Onsemi is a NPN Power BJT with 140V VCE, 10A IC, and 80W Pd. Ideal for amplifier applications, it has hFE of 90 and fT of 30MHz. Its PLASTIC/EPOXY package with FLANGE MOUNT style makes it suitable for high-power designs in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,981 parts In-Stock

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Digiode

USA . 274 parts In-Stock

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Native Components

USA . 873 parts In-Stock

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$96.582

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$92.719

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Northwest PG Solutions

USA . 1,640 parts In-Stock

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TANS Electronics

Latvia . 6,626 parts In-Stock

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Kulean Microsystems

USA . 4,039 parts In-Stock

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SupplyDigital Components

Austria . 3,508 parts In-Stock

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Corphita

USA . 2,491 parts In-Stock

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Supply Digital

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Problanco Electronics

Mexico . 1,644 parts In-Stock

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Corohmni

South Africa . 327 parts In-Stock

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UHIMA Technologies

Türkiye . 34 parts In-Stock

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Overview

Enhance your amplifier designs with the high-quality FJAF4310Y power bipolar junction transistor by Onsemi. This NPN transistor offers a maximum VCEsat of just 0.5V, ensuring efficient performance in various applications. With a maximum power dissipation of 80W and a minimum DC current gain of 90, this transistor is a reliable choice for your projects. Whether you're working on audio amplifiers or motor control systems, the FJAF4310Y provides the value, benefits, and advantages you need to bring your creations to life. Trust Onsemi for top-notch components that deliver exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a long lifespan and reliable performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easy to use in various applications.

Maximum VCEsat: 0.5 V

The low VCEsat value indicates high efficiency and minimal power loss in operation.

Maximum Power Dissipation (Abs): 80 W

With a high power dissipation capability, this transistor can handle large amounts of power without overheating.

Maximum Collector-Emitter Voltage: 140 V

The high voltage rating allows for versatility in different voltage requirements in circuits.

Minimum DC Current Gain (hFE): 90

A high minimum DC current gain ensures consistent and stable amplification of signals.

Nominal Transition Frequency (fT): 30 MHz

The high transition frequency enables fast switching speeds and high-frequency operation, making it ideal for RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJAF4310Y attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

90

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

FJAF4310Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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