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FJAF6810DTU

Onsemi

FJAF6810DTU by Onsemi

FJAF6810DTU by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 750V and max. collector current of 10A. Ideal for switching applications, it has a min DC current gain of 5 and operates up to 150 °C. The package style is flange mount with through-hole terminals, making it suitable for various power electronics projects.

Median Price

$1.475

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,044 parts In-Stock

1+ parts

-

100+ parts

$1.320

1k+ parts

$1.180

10k+ parts

$1.110

2,044

-

$1.320

$1.180

$1.110

DigiKey

USA . 2,044 parts In-Stock

1+ parts

-

100+ parts

-

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$1.530

10k+ parts

$1.530

2,044

-

-

$1.530

$1.530

Verical

USA . 2,044 parts In-Stock

1+ parts

-

100+ parts

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$1.475

10k+ parts

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2,044

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$1.475

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Distributors (In-Stock)

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Vyrian

USA . 1,154 parts In-Stock

1+ parts

$1.210

100+ parts

-

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1,154

$1.210

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Digiode

USA . 2,471 parts In-Stock

1+ parts

$1.396

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2,471

$1.396

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DigiKey Marketplace

USA . 2,044 parts In-Stock

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2,044

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ComSIT Distribution GmbH

Germany . 330 parts In-Stock

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330

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Distributors (Availability)

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Corohmni

South Africa . 177 parts In-Stock

1+ parts

$1.210

100+ parts

-

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177

$1.210

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Corphita

USA . 1,298 parts In-Stock

1+ parts

$1.323

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1,298

$1.323

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Microchip USA

USA . 459 parts In-Stock

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$9.165

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459

$9.165

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Native Components

USA . 346 parts In-Stock

1+ parts

$144.941

100+ parts

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$139.143

346

$144.941

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$139.143

Northwest PG Solutions

USA . 2,203 parts In-Stock

1+ parts

$159.435

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2,203

$159.435

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SupplyDigital Components

Austria . 5,660 parts In-Stock

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5,660

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Kulean Microsystems

USA . 4,603 parts In-Stock

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Problanco Electronics

Mexico . 3,903 parts In-Stock

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Continental Prestige Electronics

USA . 2,044 parts In-Stock

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$1.770

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$1.770

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Supply Digital

USA . 1,016 parts In-Stock

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1,016

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TANS Electronics

Latvia . 634 parts In-Stock

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634

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UHIMA Technologies

Türkiye . 507 parts In-Stock

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507

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Perfect Parts

USA . 88 parts In-Stock

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88

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Overview

Elevate your power switching capabilities with the FJAF6810DTU by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor (BJT) boasts a single configuration with a built-in diode and resistor, making it a versatile choice for a wide range of applications. Whether you're looking to enhance efficiency in your electronics or improve performance in your projects, this transistor is designed to deliver reliable and consistent results. With a maximum collector-emitter voltage of 750V and a maximum collector current of 10A, trust in Onsemi's quality engineering to amplify your potential.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the transistor lightweight and durable, ideal for various applications.

Polarity or Channel Type: NPN

The NPN channel type allows for easy integration with other components in circuits, making it versatile for different projects.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit designs and save space on the PCB, making it convenient for compact applications.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable performance and efficient operation in control systems.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows the transistor to withstand tough environments and ensures long-term reliability.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJAF6810DTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

750 V

Minimum DC Current Gain (hFE):

5

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FJAF6810DTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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