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FJAF4210R

Onsemi

FJAF4210R by Onsemi

FJAF4210R by Onsemi is a PNP Power BJT with 140V VCE, 10A IC, and 80W power dissipation. Ideal for amplifier applications, it has a 0.5V VCEsat and operates up to 150 °C. This transistor features a single configuration in a rectangular package with through-hole terminals.

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1k+

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Digiode

USA . 2,201 parts In-Stock

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Vyrian

USA . 718 parts In-Stock

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Native Components

USA . 43 parts In-Stock

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$101.460

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$97.402

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Northwest PG Solutions

USA . 724 parts In-Stock

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$111.606

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Kulean Microsystems

USA . 7,851 parts In-Stock

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Problanco Electronics

Mexico . 4,423 parts In-Stock

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Corphita

USA . 2,841 parts In-Stock

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SupplyDigital Components

Austria . 2,481 parts In-Stock

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TANS Electronics

Latvia . 1,831 parts In-Stock

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Supply Digital

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Corohmni

South Africa . 423 parts In-Stock

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UHIMA Technologies

Türkiye . 91 parts In-Stock

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Overview

Enhance your electronics projects with the FJAF4210R by Onsemi, a high-quality Power Bipolar Junction Transistor designed for amplifiers. With a maximum power dissipation of 80W and a low VCEsat of 0.5V, this PNP transistor offers superior performance and reliability. Whether you're working on audio equipment, power supplies, or motor control systems, the FJAF4210R is the ideal choice for your applications. Trust Onsemi's expertise in semiconductor manufacturing to deliver value and benefits that meet your needs. Upgrade your designs today with the FJAF4210R and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and longevity.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are preferred, offering compatibility with existing circuit designs.

Configuration: SINGLE

Simplifies circuit design and implementation, making it easier to integrate into various systems.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification tasks.

Maximum VCEsat: 0.5 V

Low VCEsat ensures efficient operation and minimal power loss, making the transistor energy-efficient.

Package Shape: RECTANGULAR

Compact and space-saving design, allowing for easy integration into tight spaces or densely packed PCBs.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and mounting onto PCBs, enhancing ease of assembly and maintenance.

Maximum Power Dissipation (Abs): 80 W

With high power dissipation capability, this transistor can handle high-power applications without overheating.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting onto a flange, providing mechanical stability and heat dissipation benefits.

Minimum DC Current Gain (hFE): 50

Consistent and reliable current gain ensures stable amplification performance in various operating conditions.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 140 V

High breakdown voltage rating allows for safe operation in applications where high voltage transients may occur.

Transistor Element Material: SILICON

Silicon material offers good thermal and electrical properties, ensuring reliable performance in a wide range of operating conditions.

Maximum Collector Current (IC): 10 A

High IC rating allows for handling high current loads, making it suitable for power applications.

Terminal Position: SINGLE

Simplified terminal configuration for straightforward connection, reducing chances of wiring errors.

Case Connection: ISOLATED

Isolated case connection provides electrical insulation, preventing short circuits and enhancing safety.

Nominal Transition Frequency (fT): 30 MHz

Higher transition frequency allows for faster switching speeds, ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJAF4210R attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

FJAF4210R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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