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2STA2121

STMicroelectronics

2STA2121 by STMicroelectronics

2STA2121 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 220W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.

Median Price

$5.540

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 243 parts In-Stock

1+ parts

$5.540

100+ parts

$2.649

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-

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243

$5.540

$2.649

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Distributors (In-Stock)

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Digiode

USA . 2,295 parts In-Stock

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$5.263

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2,295

$5.263

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Vyrian

USA . 4,739 parts In-Stock

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4,739

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Zilex Electronics Inc.

Canada . 950 parts In-Stock

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950

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Anansix

USA . 685 parts In-Stock

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685

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Sensible Micro Corp

USA . 303 parts In-Stock

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-

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$1.388

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$1.282

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303

-

$1.388

$1.282

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ComSIT Distribution GmbH

Germany . 275 parts In-Stock

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275

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R&J Components

USA . 175 parts In-Stock

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175

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Cyclops Electronics Ltd

UK . 50 parts In-Stock

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50

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 609 parts In-Stock

1+ parts

$1.355

100+ parts

-

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$1.220

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609

$1.355

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$1.220

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MKK Technologies

India . 2,276 parts In-Stock

1+ parts

$2.548

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2,276

$2.548

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DigiPath Technology Company

USA . 2,276 parts In-Stock

1+ parts

$2.548

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2,276

$2.548

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Ampacity Inc.

Singapore . 243 parts In-Stock

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$4.710

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243

$4.710

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Corphita

USA . 1,504 parts In-Stock

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$4.986

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1,504

$4.986

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Microchip USA

USA . 286 parts In-Stock

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$28.925

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286

$28.925

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Alle Elektronik GmbH

Germany . 4,097 parts In-Stock

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Parana Technologies

USA . 2,108 parts In-Stock

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$1.620

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2,108

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$1.620

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Northwest PG Solutions

USA . 2,063 parts In-Stock

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2,063

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Perfect Parts

USA . 1,120 parts In-Stock

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1,120

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Native Components

USA . 514 parts In-Stock

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514

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Component Stockers USA

USA . 310 parts In-Stock

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310

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Overview

Unlock the power of innovation with the 2STA2121 from STMicroelectronics, a trusted leader in semiconductor technology. This robust PNP BJT excels in switching applications, delivering exceptional performance and reliability for your electronic projects. With its high power dissipation and impressive thermal characteristics, it ensures longevity and efficiency. Choose the 2STA2121 to elevate your designs, benefiting from ST's commitment to quality and cutting-edge engineering!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good thermal insulation and protection against environmental stresses, making it suitable for various applications.

Polarity or Channel Type: PNP

Being a PNP transistor, it is versatile for various electronic configurations and ideal for applications where negative supply voltage is needed.

Configuration: SINGLE

The single configuration simplifies design and layout, allowing for easier integration into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures efficient performance in digital circuits.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and a compact design, optimizing space in electronic assemblies.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides robust physical connections, suitable for high-stress environments.

No. of Terminals: 3

The three-terminal design is standard for BJTs, facilitating simple connections in various circuit configurations.

Maximum Power Dissipation (Abs): 220 W

High power dissipation capability makes this transistor ideal for high-power applications, ensuring reliable performance.

Package Style (Meter): FLANGE MOUNT

Flange mount style allows for easier heat dissipation and secure mounting in demanding environments.

Minimum DC Current Gain (hFE): 35

A minimum hFE of 35 ensures sufficient amplification for a variety of signaling applications.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C allows this transistor to function effectively in high-temperature environments.

Maximum Collector-Emitter Voltage: 250 V

With a maximum collector-emitter voltage of 250V, it can handle significant voltage levels, making it suitable for high-voltage applications.

Transistor Element Material: SILICON

Silicon as the elemental material provides excellent electrical characteristics and stability.

Maximum Collector Current (IC): 17 A

The ability to handle up to 17A of collector current makes this transistor highly capable for power applications.

Terminal Position: SINGLE

A single terminal position makes it easier to design PCB layouts and reduces complexity in circuit design.

Nominal Transition Frequency (fT): 25 MHz

A transition frequency of 25 MHz allows this transistor to operate effectively in high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STA2121 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

35

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2STA2121 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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