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STMicroelectronics Power Bipolar Junction Transistors (BJT) 194

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2STN2550 by STMicroelectronics

2STN2550

STMicroelectronics

2STN2550 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max collector current of 5 A, a collector-emitter voltage of 50 V, and operates up to 150 °C. Its compact SO package ensures efficient surface mounting in electronic circuits.

COLLECTOR

5 A

50 V

SINGLE

80

R-PDSO-G4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

GULL WING

DUAL

SWITCHING

SILICON

BUL1203EFP by STMicroelectronics

BUL1203EFP

STMicroelectronics

BUL1203EFP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 550 V, a power dissipation of 36 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

ISOLATED

5 A

550 V

SINGLE

9

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

36 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST2001FX by STMicroelectronics

ST2001FX

STMicroelectronics

ST2001FX by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 55W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.

ISOLATED

10 A

600 V

SINGLE

5

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

245

NPN

55 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

BULB49DT4 by STMicroelectronics

BULB49DT4

STMicroelectronics

BULB49DT4 by STMicroelectronics is an NPN power BJT designed for efficient switching applications. It features a max collector-emitter voltage of 450V, 80W power dissipation, and operates up to 150 °C. Its compact surface mount design ensures versatility in various electronic circuits.

5 A

450 V

SINGLE WITH BUILT-IN DIODE

4

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

NPN

80 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

STC03DE150 by STMicroelectronics

STC03DE150

STMicroelectronics

STC03DE150 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 100W, a collector current of 3A, and a min DC gain (hFE) of 3.5. This versatile transistor comes in a flange mount package with through-hole terminals.

3 A

SINGLE WITH BUILT-IN FET AND DIODE

3.5

R-PSFM-T4

e3

1

4

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

100 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STC03DE170 by STMicroelectronics

STC03DE170

STMicroelectronics

STC03DE170 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 100W, a collector current of 3A, and a min DC gain (hFE) of 3.5. Its compact flange mount design ensures efficient performance in various electronic circuits.

3 A

SINGLE WITH BUILT-IN FET AND DIODE

3.5

R-PSFM-T4

e3

1

4

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

100 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STE50DE100 by STMicroelectronics

STE50DE100

STMicroelectronics

STE50DE100 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 400W, supports up to 50A collector current, and operates at temperatures up to 150 °C. Its robust design ensures reliability in demanding environments.

ISOLATED

50 A

SINGLE WITH BUILT-IN FET AND DIODE

3

R-PUFM-X4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

400 W

Not Qualified

Other Transistors

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

STW2040 by STMicroelectronics

STW2040

STMicroelectronics

STW2040 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 125 W, operates up to 150 °C, and supports collector-emitter voltages up to 500 V. Ideal for high-performance electronic circuits.

20 A

500 V

SINGLE

10

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

125 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STX13005G-AP by STMicroelectronics

STX13005G-AP

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2.8 W; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 8;

3 A

400 V

SINGLE

8

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

2.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STX13005G by STMicroelectronics

STX13005G

STMicroelectronics

STX13005G by STMicroelectronics is a NPN BJT transistor with max. collector-emitter voltage of 400V and max. collector current of 3A. It has a min. DC current gain of 8, suitable for switching applications with a max. power dissipation of 2.8W in cylindrical package style for through-hole mounting at up to 150°C operating temperature.

3 A

400 V

SINGLE

8

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

2.8 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

2STA1837 by STMicroelectronics

2STA1837

STMicroelectronics

2STA1837 by STMicroelectronics is a PNP BJT designed for amplifier applications. It features a max collector-emitter voltage of 230V, a min DC current gain (hFE) of 100, and operates up to 150 °C. Its flange mount design ensures reliable performance in various electronic circuits.

ISOLATED

1 A

230 V

SINGLE

100

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

Not Qualified

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

70 MHz

2STC4793 by STMicroelectronics

2STC4793

STMicroelectronics

2STC4793 by STMicroelectronics is an NPN power BJT ideal for amplifier applications. It features a max collector-emitter voltage of 230V, a min DC current gain (hFE) of 100, and operates up to 150 °C. Its through-hole design ensures easy integration in various circuits.

ISOLATED

1 A

230 V

SINGLE

100

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

100 MHz

STX117-AP by STMicroelectronics

STX117-AP

STMicroelectronics

STX117-AP by STMicroelectronics is a PNP Darlington BJT designed for efficient switching applications. It features a max power dissipation of 1.2W, a min DC current gain (hFE) of 500, and operates up to 150 °C. Its cylindrical package ensures reliable performance in various electronic circuits.

BUILT IN BIAS RESISTANCE RATIO IS 0.0067

2 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

500

TO-92

O-PBCY-W3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

1.2 W

Not Qualified

Other Transistors

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON

2STBN15D100T4 by STMicroelectronics

2STBN15D100T4

STMicroelectronics

2STBN15D100T4 by STMicroelectronics is a NPN Power BJT with Darlington configuration, ideal for switching applications. It has a max collector-emitter voltage of 100V, max collector current of 12A, and min DC current gain of 750. This transistor comes in a small outline package with gull wing terminals, suitable for surface mount assembly.

COLLECTOR

12 A

100 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

750

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

NPN

70 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

ST13003DN by STMicroelectronics

ST13003DN

STMicroelectronics

ST13003DN by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400V, power dissipation of 20W, and operates up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

1 A

400 V

SINGLE WITH BUILT-IN DIODE

5

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STD724T4 by STMicroelectronics

STD724T4

STMicroelectronics

STD724T4 by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 15W, a collector current of 3A, and operates up to 150 °C. Its compact surface mount design ensures efficient performance in electronic circuits.

3 A

30 V

SINGLE

30

TO-252

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

15 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

GULL WING

SINGLE

SWITCHING

SILICON

100 MHz

STF724 by STMicroelectronics

STF724

STMicroelectronics

STF724 by STMicroelectronics is an NPN BJT designed for switching applications, featuring a max power dissipation of 1.4 W and a collector current of 3 A. It operates up to 150 °C with a collector-emitter voltage of 30 V. This compact surface mount transistor ensures efficient performance in various electronic circuits.

COLLECTOR

3 A

30 V

SINGLE

30

R-PSSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.4 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

FLAT

SINGLE

SWITCHING

SILICON

100 MHz

STN724 by STMicroelectronics

STN724

STMicroelectronics

STN724 by STMicroelectronics is a versatile NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, supports up to 3A collector current, and operates at temperatures up to 150 °C. Its compact SO package ensures efficient surface mounting.

COLLECTOR

3 A

30 V

SINGLE

30

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

BUL804 by STMicroelectronics

BUL804

STMicroelectronics

BUL804 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 70W, operates up to 150 °C, and supports collector-emitter voltages up to 450V. Ideal for high-power circuits with through-hole mounting.

4 A

450 V

SINGLE

10

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

70 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

HD1520FX by STMicroelectronics

HD1520FX

STMicroelectronics

HD1520FX by STMicroelectronics is a powerful NPN BJT designed for amplifying applications. It features a max power dissipation of 64W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.

ISOLATED

15 A

700 V

SINGLE

5.5

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

64 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

HD1750JL by STMicroelectronics

HD1750JL

STMicroelectronics

HD1750JL by STMicroelectronics is a powerful NPN BJT designed for amplifiers, featuring a max power dissipation of 200W and an operating temp up to 150 °C. It supports collector-emitter voltages of 800V and handles currents up to 24A. Ideal for high-performance applications in electronics.

24 A

800 V

SINGLE

5.5

TO-264AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

HD1760JL by STMicroelectronics

HD1760JL

STMicroelectronics

HD1760JL by STMicroelectronics is a powerful NPN BJT designed for amplifiers, featuring a max power dissipation of 200W and an operating temp up to 150 °C. It supports collector-emitter voltages of 800V and handles currents up to 36A. Ideal for high-performance applications in various electronic circuits.

36 A

800 V

SINGLE

5

TO-264AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

ST600K by STMicroelectronics

ST600K

STMicroelectronics

ST600K by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 12.5W, operates up to 150 °C, and supports collector-emitter voltages up to 120V. Ideal for efficient power management in electronic circuits.

1 A

120 V

SINGLE

50

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

12.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST631K by STMicroelectronics

ST631K

STMicroelectronics

ST631K by STMicroelectronics is a PNP BJT designed for switching applications. It features a max power dissipation of 12.5W, operates up to 150 °C, and supports collector-emitter voltages of 120V. Ideal for efficient circuit designs in various electronic devices.

1 A

120 V

SINGLE

50

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

12.5 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

MD2310FX by STMicroelectronics

MD2310FX

STMicroelectronics

STMicroelectronics' MD2310FX is a NPN BJT transistor with 700V VCE, 14A IC, and 62W power dissipation. Ideal for amplifier applications, it has a min hFE of 6 and operates up to 150°C. The package is rectangular with through-hole terminals in matte tin finish.

ISOLATED

14 A

700 V

SINGLE

6

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

62 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

ST1802FX by STMicroelectronics

ST1802FX

STMicroelectronics

ST1802FX by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 60W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.

ISOLATED

10 A

600 V

SINGLE

4

R-PSFM-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

60 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST2111FX by STMicroelectronics

ST2111FX

STMicroelectronics

ST2111FX by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 700V, a min DC current gain (hFE) of 4.5, and supports up to 12A collector current. Ideal for power management in electronic circuits.

ISOLATED

12 A

700 V

SINGLE

4.5

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

MD1803DFX by STMicroelectronics

MD1803DFX

STMicroelectronics

MD1803DFX by STMicroelectronics is a powerful NPN BJT designed for amplifying applications. It features a max power dissipation of 57W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.

ISOLATED

10 A

700 V

SINGLE WITH BUILT-IN DIODE

5

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

57 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

MD2009DFX by STMicroelectronics

MD2009DFX

STMicroelectronics

MD2009DFX by STMicroelectronics is a powerful NPN BJT designed for amplifying applications. It features a max power dissipation of 58W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.

BUILT-IN BIAS RESISTORS

ISOLATED

10 A

700 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

5

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

58 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

2N5154S1 by STMicroelectronics

2N5154S1

STMicroelectronics

2N5154S1 from STMicroelectronics is an NPN power BJT ideal for switching applications. It features a max VCEsat of 1.5V, 35W power dissipation, and operates b/w -65 °C to 200 °C. Its compact no-lead design enhances efficiency in various electronic circuits.

HIGH RELIABILITY

COLLECTOR

5 A

250 pF

80 V

SINGLE

40

R-XBCC-N3

1

3

200 Cel

-65 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

NPN

3.3 W

35 W

Not Qualified

YES

NO LEAD

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

1300 ns

500 ns

1.5 V

2ST1480FP by STMicroelectronics

2ST1480FP

STMicroelectronics

2ST1480FP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 25W, collector-emitter voltage of 80V, and operates up to 150 °C. Ideal for efficient control in electronic circuits.

ISOLATED

5 A

80 V

SINGLE

50

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

25 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

120 MHz

2STW100 by STMicroelectronics

2STW100

STMicroelectronics

2STW100 by STMicroelectronics is a powerful NPN Darlington transistor designed for switching applications. It features a max power dissipation of 130 W, a collector current of 25 A, and operates up to 150 °C. Ideal for high-efficiency circuits with robust performance.

25 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

300

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

130 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2STW200 by STMicroelectronics

2STW200

STMicroelectronics

2STW200 by STMicroelectronics is a PNP Darlington BJT designed for switching applications. It features a max power dissipation of 130 W, a min DC current gain (hFE) of 300, and operates up to 150 °C. Ideal for high-power circuits with an 80 V collector-emitter voltage.

25 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

300

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

130 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BULT3P3 by STMicroelectronics

BULT3P3

STMicroelectronics

BULT3P3 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 32W, operates up to 150 °C, and supports collector-emitter voltages up to 200V. Ideal for efficient circuit designs in various electronic devices.

3 A

200 V

SINGLE

4

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

32 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST13003N by STMicroelectronics

ST13003N

STMicroelectronics

ST13003N from STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 20W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for various electronic circuits requiring reliable performance.

1 A

400 V

SINGLE

5

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STD815CP40 by STMicroelectronics

STD815CP40

STMicroelectronics

STD815CP40 by STMicroelectronics is a versatile power BJT featuring NPN and PNP configurations for efficient switching applications. It supports a max collector-emitter voltage of 400V, operates up to 150 °C, and offers a min DC gain (hFE) of 4. Ideal for dual-element designs in various electronic circuits.

1.5 A

400 V

SEPARATE, 2 ELEMENTS

4

R-PDIP-T8

e3

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN AND PNP

Not Qualified

BIP General Purpose Small Signal

NO

MATTE TIN

THROUGH-HOLE

DUAL

SWITCHING

SILICON

STD830CP40 by STMicroelectronics

STD830CP40

STMicroelectronics

STD830CP40 by STMicroelectronics is a versatile NPN/PNP power BJT designed for switching applications. It features a max collector-emitter voltage of 400V, operates at up to 150 °C, and supports a collector current of 3A. Ideal for efficient circuit designs in various electronic devices.

3 A

400 V

SEPARATE, 2 ELEMENTS

4

R-PDIP-T8

e3

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN AND PNP

Not Qualified

BIP General Purpose Small Signal

NO

MATTE TIN

THROUGH-HOLE

DUAL

SWITCHING

SILICON

STF826 by STMicroelectronics

STF826

STMicroelectronics

STF826 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max collector current of 3 A, a power dissipation of 1.4 W, and operates up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.

COLLECTOR

3 A

30 V

SINGLE

30

R-PDSO-F4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

1.4 W

Not Qualified

Other Transistors

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

STS05DTP03 by STMicroelectronics

STS05DTP03

STMicroelectronics

STS05DTP03 from STMicroelectronics is a versatile NPN/PNP BJT designed for switching applications. It features a max power dissipation of 2W, supports up to 5A collector current, and operates at temperatures up to 150 °C. Its compact SO package ensures efficient surface mounting.

5 A

30 V

SEPARATE, 2 ELEMENTS

80

R-PDSO-G8

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

2 W

Not Qualified

BIP General Purpose Small Signal

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

BUL704 by STMicroelectronics

BUL704

STMicroelectronics

BUL704 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 70W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.

4 A

400 V

SINGLE

14

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

70 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

HD1530FX by STMicroelectronics

HD1530FX

STMicroelectronics

HD1530FX by STMicroelectronics is a powerful NPN BJT designed for amplifiers, featuring a max power dissipation of 70W and a collector-emitter voltage of 700V. It operates at up to 150 °C with a min DC current gain of 5.5. Ideal for high-performance applications in various electronic circuits.

26 A

700 V

SINGLE

5.5

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

70 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

HD1530JL by STMicroelectronics

HD1530JL

STMicroelectronics

HD1530JL by STMicroelectronics is a powerful NPN BJT designed for amplifying applications. It features a max power dissipation of 200W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.

26 A

700 V

SINGLE

5

TO-264AA

R-PSFM-T3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

ST8812FP by STMicroelectronics

ST8812FP

STMicroelectronics

ST8812FP by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 36W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-power circuits with through-hole mounting.

ISOLATED

7 A

600 V

SINGLE

4.5

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

36 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST8812FX by STMicroelectronics

ST8812FX

STMicroelectronics

ST8812FX by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 50W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.

ISOLATED

7 A

600 V

SINGLE

4.5

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

50 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STF817A by STMicroelectronics

STF817A

STMicroelectronics

STF817A by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.4W and collector current of 1.5A. It operates up to 150 °C with an 80V collector-emitter voltage. Ideal for compact electronic designs due to its small outline package.

COLLECTOR

1.5 A

80 V

SINGLE

30

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.4 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

FLAT

DUAL

30

SWITCHING

SILICON

50 MHz

STN817A by STMicroelectronics

STN817A

STMicroelectronics

STN817A by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.6 W and an operating temp up to 150 °C. It supports a collector-emitter voltage of 80 V and offers a min DC gain (hFE) of 30. This compact surface mount transistor is ideal for efficient circuit designs.

COLLECTOR

1.5 A

80 V

SINGLE

30

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

SWITCHING

SILICON

50 MHz

STS01DTP06 by STMicroelectronics

STS01DTP06

STMicroelectronics

STS01DTP06 by STMicroelectronics is a Power BJT with NPN and PNP channels, ideal for switching applications. It has 2 elements in a small outline package, with max power dissipation of 2W and max collector current of 3A. The transistor operates up to 150°C, features dual terminals with Gull Wing form, and can withstand peak reflow at 260°C for up to 40s.

3 A

30 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G8

e4

1

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

2 W

Not Qualified

BIP General Purpose Small Signal

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

DUAL

40

SWITCHING

SILICON

BUL3P5 by STMicroelectronics

BUL3P5

STMicroelectronics

BUL3P5 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 60W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient control in electronic circuits.

3 A

400 V

SINGLE

4

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

60 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON