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2N5154S1

STMicroelectronics

2N5154S1 by STMicroelectronics

2N5154S1 from STMicroelectronics is an NPN power BJT ideal for switching applications. It features a max VCEsat of 1.5V, 35W power dissipation, and operates b/w -65 °C to 200 °C. Its compact no-lead design enhances efficiency in various electronic circuits.

Median Price

$173.110

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 10 parts In-Stock

1+ parts

$105.160

100+ parts

$99.930

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-

10k+ parts

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10

$105.160

$99.930

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-

Verical

USA . 10 parts In-Stock

1+ parts

$105.160

100+ parts

$99.930

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-

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-

10

$105.160

$99.930

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-

Chip1Stop

Japan . 20 parts In-Stock

1+ parts

$173.110

100+ parts

-

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-

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20

$173.110

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-

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DigiKey

USA . 4 parts In-Stock

1+ parts

$177.900

100+ parts

-

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4

$177.900

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Mouser Electronics

USA . 27 parts In-Stock

1+ parts

$234.230

100+ parts

-

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27

$234.230

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 978 parts In-Stock

1+ parts

$135.850

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-

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978

$135.850

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Anansix

USA . 2,188 parts In-Stock

1+ parts

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2,188

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Vyrian

USA . 2,010 parts In-Stock

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2,010

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,746 parts In-Stock

1+ parts

$0.490

100+ parts

-

1k+ parts

$0.441

10k+ parts

-

1,746

$0.490

-

$0.441

-

MKK Technologies

India . 29 parts In-Stock

1+ parts

$0.922

100+ parts

-

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29

$0.922

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DigiPath Technology Company

USA . 29 parts In-Stock

1+ parts

$0.922

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-

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29

$0.922

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$2.010

100+ parts

$1.829

1k+ parts

$1.648

10k+ parts

-

2,000

$2.010

$1.829

$1.648

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Native Components

USA . 307 parts In-Stock

1+ parts

$9.301

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307

$9.301

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Northwest PG Solutions

USA . 949 parts In-Stock

1+ parts

$10.231

100+ parts

$9.208

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949

$10.231

$9.208

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Corphita

USA . 4,788 parts In-Stock

1+ parts

$128.700

100+ parts

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4,788

$128.700

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Component Stockers USA

USA . 25 parts In-Stock

1+ parts

$275.110

100+ parts

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25

$275.110

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Parana Technologies

USA . 161 parts In-Stock

1+ parts

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100+ parts

$0.586

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161

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$0.586

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Overview

Unlock exceptional performance with the 2N5154S1 from STMicroelectronics, a leading name in cutting-edge semiconductor solutions. This NPN power BJT delivers unparalleled reliability for switching applications, making it ideal for various electronic devices. With its robust design and efficient power management, it ensures optimal functionality even in demanding environments. Choose the 2N5154S1 for enhanced energy efficiency and peace of mind, knowing you’re backed by a trusted manufacturer.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used in switching applications, providing efficient performance in various electronic circuits.

Configuration: SINGLE

A single configuration allows for easier integration and compact designs in electronic systems.

Transistor Application: SWITCHING

Optimized for switching applications, making it suitable for power management and control in circuits.

Surface Mount: YES

Surface mount technology (SMT) enhances reliability and saves space, facilitating modern compact electronic designs.

Maximum VCEsat: 1.5 V

Low saturation voltage indicates efficient switching performance and reduced power loss, enhancing overall circuit efficiency.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space in PCB layouts and easier handling during assembly.

Terminal Form: NO LEAD

No lead design improves thermal conductivity and reduces the risk of misplaced leads, ensuring a better connection.

No. of Terminals: 3

With three terminals, this transistor provides straightforward connectivity, simplifying its integration into circuits.

Maximum Power Dissipation (Abs): 35 W

High power dissipation capability allows this BJT to handle larger loads, making it suitable for high-power applications.

Package Style (Meter): CHIP CARRIER

The chip carrier package style ensures excellent heat dissipation and reliability under operational stress.

Maximum Power Dissipation Ambient: 3.3 W

This specification indicates safe operating limits in ambient conditions, helping prevent thermal failure.

Minimum DC Current Gain (hFE): 40

A minimum hFE of 40 offers sufficient amplification, making this transistor suitable for various applications.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this BJT can function reliably in extreme thermal conditions.

Maximum Collector-Base Capacitance: 250 pF

Low capacitance ensures faster switching speeds, ideal for high-frequency and high-speed applications.

Maximum Collector-Emitter Voltage: 80 V

An 80 V rating provides versatility for use in various electronic circuits, supporting higher voltage applications.

Transistor Element Material: SILICON

Silicon is a well-established material for transistors, ensuring reliability and performance consistency.

Maximum Turn On Time (ton): 500 ns

Fast turn-on time enhances the responsiveness of the circuit, making it suitable for dynamic applications.

Minimum Operating Temperature: -65 °C

A wide temperature range allows for deployment in harsh environments and demanding applications.

Maximum Collector Current (IC): 5 A

A collector current capability of 5 A supports significant load driving, making it ideal for power applications.

Maximum Turn Off Time (toff): 1300 ns

Quick turn-off time is essential for effective switching in high-speed applications, ensuring circuit efficiency.

Terminal Position: BOTTOM

Bottom terminal positioning optimizes layout design on PCBs, enhancing space efficiency and ease of routing.

Case Connection: COLLECTOR

Direct collector connection improves electrical performance and simplifies circuit design for users.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5154S1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Base Capacitance:

250 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-XBCC-N3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

3.3 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

1300 ns

Maximum Turn On Time (ton):

500 ns

Maximum VCEsat:

1.5 V

Trade Compliance

2N5154S1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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