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2N5191G

Onsemi

2N5191G by Onsemi

2N5191G by Onsemi is a NPN Power BJT with max. collector-emitter voltage of 60V, max. collector current of 4A, and max. power dissipation of 40W. Ideal for switching applications due to its single configuration and high transition frequency of 2MHz in a rectangular package style.

Median Price

$0.566

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

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Newark

USA . 662 parts In-Stock

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$0.122

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$0.122

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$0.122

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662

$0.122

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$0.122

Arrow

USA . 1,540 parts In-Stock

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$0.505

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$0.408

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$0.346

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$0.331

1,540

$0.505

$0.408

$0.346

$0.331

Chip1Stop

Japan . 2,006 parts In-Stock

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$0.626

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$0.418

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$0.395

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2,006

$0.626

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Farnell

UK . 10,059 parts In-Stock

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$1.060

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$0.498

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$0.362

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$0.312

10,059

$1.060

$0.498

$0.362

$0.312

Mouser Electronics

USA . 5,296 parts In-Stock

1+ parts

$1.250

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$0.586

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$0.426

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$0.367

5,296

$1.250

$0.586

$0.426

$0.367

Element14

Singapore . 10,059 parts In-Stock

1+ parts

$1.700

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$0.907

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$0.532

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$0.522

10,059

$1.700

$0.907

$0.532

$0.522

Avnet

USA . 3,500 parts In-Stock

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Verical

USA . 2,000 parts In-Stock

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$0.630

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Master Electronics

USA . 2,000 parts In-Stock

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$0.374

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$0.314

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$0.374

$0.314

RS (Exports)

UK . 980 parts In-Stock

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$0.446

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$0.444

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Rochester

USA . 152 parts In-Stock

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-

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$0.436

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$0.362

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$0.323

152

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$0.436

$0.362

$0.323

Distributors (In-Stock)

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Digiode

USA . 1,997 parts In-Stock

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$0.285

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Vyrian

USA . 1,852 parts In-Stock

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$0.300

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NAC Semi

USA . 14,000 parts In-Stock

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$0.839

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IBS Electronics

USA . 2,000 parts In-Stock

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$0.519

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$0.484

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$0.456

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$0.484

$0.456

Flip Electronics

USA . 1,000 parts In-Stock

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VNN

France . 602 parts In-Stock

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ComSIT Distribution GmbH

Germany . 464 parts In-Stock

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ComSIT USA

USA . 464 parts In-Stock

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Cyclops Electronics Ltd

UK . 111 parts In-Stock

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Nova Conductors

Japan . 20 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 4,597 parts In-Stock

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$0.264

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$0.264

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Corphita

USA . 887 parts In-Stock

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$0.270

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Corohmni

South Africa . 230 parts In-Stock

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Continental Prestige Electronics

USA . 8 parts In-Stock

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$0.870

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$0.518

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$0.287

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$0.270

8

$0.870

$0.518

$0.287

$0.270

Metaverse IC Inc.

Canada . 86,168 parts In-Stock

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Perfect Parts

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Microchip USA

USA . 9,361 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,806 parts In-Stock

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TANS Electronics

Latvia . 4,656 parts In-Stock

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SupplyDigital Components

Austria . 4,196 parts In-Stock

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Kulean Microsystems

USA . 2,807 parts In-Stock

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Problanco Electronics

Mexico . 1,983 parts In-Stock

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Glotronic Ltd.

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Kepictronics

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Authorized Procurement Solutions

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UHIMA Technologies

Türkiye . 98 parts In-Stock

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Netroflash

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Overview

Unlock the power of innovation with the 2N5191G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors (BJTs) like no other. Ideal for switching applications, this NPN transistor offers high performance and reliability, making it a versatile solution for a wide range of electronic projects. With a maximum power dissipation of 40W and a maximum collector current of 4A, the 2N5191G is designed to exceed your expectations. Experience seamless operation and unmatched efficiency with Onsemi's 2N5191G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

Commonly used for amplification and switching applications, making it versatile for various circuit designs.

Configuration: SINGLE

Simplified design with only one transistor, making it easier to integrate into circuits.

Transistor Application: SWITCHING

Suitable for applications where rapid switching between on and off states is required, such as in power supplies or motor control.

Maximum Power Dissipation (Abs): 40 W

Ability to handle high power dissipation, making it suitable for applications requiring high power output.

Maximum Collector-Emitter Voltage: 60 V

Can handle high voltage levels, making it suitable for applications where higher voltages are required.

Maximum Collector Current (IC): 4 A

High collector current capability allows for handling large currents without overheating, suitable for power applications.

Nominal Transition Frequency (fT): 2 MHz

Higher transition frequency enables faster switching speeds, ideal for applications requiring quick response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5191G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5191G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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