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2N5195

Onsemi

2N5195 by Onsemi

2N5195 by Onsemi is a PNP BJT with 40W power dissipation, 80V max. collector-emitter voltage, and 4A max. collector current. Ideal for switching applications due to its single configuration and 2MHz transition frequency. Suitable for use in environments up to 140°C, featuring a flange mount package style.

Median Price

$0.815

Lifecycle Status

Suppliers In-Stock

44

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 115 parts In-Stock

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$0.273

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Element14

Singapore . 179 parts In-Stock

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$0.533

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179

$0.815

$0.671

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$0.482

Newark

USA . 72 parts In-Stock

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$0.850

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$0.448

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$0.358

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$0.310

72

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$0.448

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Freelance Electronics

USA . 6 parts In-Stock

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Digiode

USA . 2,959 parts In-Stock

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TEDSS.com

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DigiKey Marketplace

USA . 16 parts In-Stock

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Electro Enterprises

USA . 28 parts In-Stock

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$1.571

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$0.965

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FDH Electronics

USA . 22 parts In-Stock

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$1.571

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$1.310

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$0.965

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$0.887

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Ace Electronics

USA . 3 parts In-Stock

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$7.500

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American Microsemiconductor Inc.

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Forefront Electronics and Design

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Bristol Electronics

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Vyrian

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TME

Poland . 1,560 parts In-Stock

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$0.166

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Lakeland Logistics Inc

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ZD Integrated Circuits Inc.

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Holdelec - ElecDif-Pro

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MISTER SPROCKETS

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Corel Iberica Componentes, S.L.

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LittleDiode

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American Connector Supply Corp

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Manoshevitz Elec. Sales

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Resion

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ComSIT Distribution GmbH

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M&R Communications

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Corohmni

South Africa . 295 parts In-Stock

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$0.216

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Corphita

USA . 3,749 parts In-Stock

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$0.246

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Component Stockers USA

USA . 272 parts In-Stock

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$0.270

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$0.250

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Native Components

USA . 483 parts In-Stock

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$1.088

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Northwest PG Solutions

USA . 1,282 parts In-Stock

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IDEA Electronic Components Group

UK . 5 parts In-Stock

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$1.511

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$1.360

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MKK Technologies

India . 1,239 parts In-Stock

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$2.841

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$2.841

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DigiPath Technology Company

USA . 1,239 parts In-Stock

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$2.841

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$2.841

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Microchip USA

USA . 3,716 parts In-Stock

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$6.500

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QUARKTWIN TECHNOLOGY LTD

USA . 18,867 parts In-Stock

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TANS Electronics

Latvia . 7,753 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,417 parts In-Stock

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Kulean Microsystems

USA . 4,788 parts In-Stock

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Perfect Parts

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SupplyDigital Components

Austria . 3,550 parts In-Stock

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Authorized Procurement Solutions

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Parana Technologies

USA . 1,874 parts In-Stock

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$1.806

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Cyclops Electronics Ltd (Excess)

UK . 1,330 parts In-Stock

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Problanco Electronics

Mexico . 988 parts In-Stock

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Kepictronics

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Glotronic Ltd.

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UHIMA Technologies

Türkiye . 290 parts In-Stock

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RTC Component Inc.

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Overview

Unlock the potential of your electronic projects with the 2N5195 by Onsemi, a top-quality Power Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this PNP transistor offers reliable performance and durability in a variety of switching applications. With a maximum power dissipation of 40 W and a maximum collector current of 4 A, the 2N5195 provides excellent value and efficiency for your projects. Upgrade your designs today with the high-performance 2N5195 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring reliable performance in various operating conditions.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering flexibility in circuit design.

Configuration: SINGLE

Simplified circuit layout and ease of use in designs that require a single transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering high efficiency and fast response times.

Maximum Power Dissipation (Abs): 40 W

Capable of handling high power levels, making it suitable for demanding applications.

Package Shape: RECTANGULAR

Allows for easy mounting and integration into circuit boards or assemblies.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and mounting onto PCBs, ensuring secure connections.

No. of Terminals: 3

Simplifies circuit connections and reduces complexity in design layouts.

Maximum Collector-Emitter Voltage: 80 V

Suitable for applications where higher voltage levels are required for proper operation.

Maximum Collector Current (IC): 4 A

Capable of handling high current levels, making it suitable for power switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5195 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

7

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5195 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-173-1825, 5961011731825, 5961-00-689-3439, 5961006893439, 5961-01-005-6607, 5961010056607, 5961-14-308-5590, 5961143085590

NIIN

011731825, 006893439, 010056607, 143085590

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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