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2N5152

Texas Instruments

2N5152 by Texas Instruments

2N5152 by Texas Instruments is a NPN BJT with hFE of 20, VCE of 80V, and IC of 2A. It is used in power applications due to its single configuration and silicon transistor element material. The package style is cylindrical with a metal body and wire terminals.

Median Price

$33.120

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Microchip Technology

USA . 192 parts In-Stock

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$33.120

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Mouser Electronics

USA . 1 parts In-Stock

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$33.120

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$30.760

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1

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American Microsemiconductor Inc.

USA . 3 parts In-Stock

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$15.810

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3

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Digiode

USA . 6,006 parts In-Stock

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$31.464

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Anansix

USA . 2,720 parts In-Stock

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2,720

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Vyrian

USA . 2,008 parts In-Stock

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2,008

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PUI

USA . 309 parts In-Stock

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Mil-Aero Solutions, Inc.

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ChromeModa Solutions

Germany . 6,206 parts In-Stock

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$0.606

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$0.497

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IDEA Electronic Components Group

UK . 3,931 parts In-Stock

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$1.430

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$1.287

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3,931

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$1.287

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DigiPath Technology Company

USA . 1,574 parts In-Stock

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$2.688

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MKK Technologies

India . 1,362 parts In-Stock

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$2.688

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Ampacity Inc.

Singapore . 97 parts In-Stock

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$28.150

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Corphita

USA . 8,349 parts In-Stock

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$29.808

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Fulton Briggs Corp.

USA . 4,748 parts In-Stock

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Microchip USA

USA . 4,381 parts In-Stock

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Northwest PG Solutions

USA . 3,741 parts In-Stock

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Parana Technologies

USA . 3,121 parts In-Stock

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$1.709

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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2,780

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Supply Digital

USA . 2,347 parts In-Stock

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Native Components

USA . 1,376 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the Texas Instruments 2N5152 Power Bipolar Junction Transistor. Manufactured by a renowned industry leader, this NPN transistor offers high-quality performance and reliability. Ideal for a variety of applications, from amplifiers to power supplies, this transistor provides superior value and benefits to customers seeking efficiency and precision in their designs. Trust in Texas Instruments to deliver excellence with the 2N5152.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal as the package body material provides durability and heat dissipation, making it suitable for high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits which makes this product versatile and widely applicable.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making this transistor easy to use for various applications.

Maximum Collector-Emitter Voltage: 80 V

With a high maximum voltage rating, this transistor can handle higher voltages and is suitable for use in a wide range of electronic devices and circuits.

Minimum DC Current Gain (hFE): 20

A higher minimum DC current gain ensures stable and predictable amplification performance in circuits, making this transistor reliable for signal amplification.

Maximum Collector Current (IC): 2 A

With a high maximum collector current rating, this transistor can handle higher current loads, making it suitable for power applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5152 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Trade Compliance

2N5152 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-240-2507, 5961002402507

NIIN

002402507

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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