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2N512B

Texas Instruments

2N512B by Texas Instruments

2N512B by Texas Instruments is a PNP BJT transistor with hFE of 20, VCE of 45V, and IC of 25A. Primarily used for switching applications due to its single configuration and germanium element material. Operates at temperatures up to 100°C in a round package style with solder lug terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 4,146 parts In-Stock

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Digiode

USA . 647 parts In-Stock

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647

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DF Sales Co.

USA . 13 parts In-Stock

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DF Sales Co.

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Electronics Depot

USA . 2 parts In-Stock

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Electronic Expediters

USA . 1 parts In-Stock

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Native Components

USA . 798 parts In-Stock

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$0.284

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$0.273

798

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$0.273

Northwest PG Solutions

USA . 183 parts In-Stock

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$0.313

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$0.276

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Parana Technologies

USA . 1,268 parts In-Stock

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$0.892

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$1.824

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DigiPath Technology Company

USA . 470 parts In-Stock

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$0.982

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$0.903

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ChromeModa Solutions

Germany . 5,000 parts In-Stock

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$1.002

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IDEA Electronic Components Group

UK . 647 parts In-Stock

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$0.902

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One Stop Electronics

USA . 725 parts In-Stock

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$6.050

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AZTECH Wire

Italy . 647 parts In-Stock

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Corphita

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Assy Fe

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Overview

Unlock the power of advanced technology with the Texas Instruments 2N512B Power Bipolar Junction Transistor. Designed for high-performance switching applications, this PNP transistor offers unparalleled reliability and efficiency. With a maximum operating temperature of 100°C and a collector current of 25A, this transistor is built to last. Whether you're in the automotive, industrial, or consumer electronics industry, the 2N512B delivers superior performance and value. Trust Texas Instruments for quality you can depend on.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides excellent heat dissipation and mechanical durability, ensuring reliable performance under high power conditions.

Polarity or Channel Type: PNP

PNP transistors are commonly used in applications where the load is connected to the collector terminal, making this transistor suitable for various switching applications.

Configuration: SINGLE

Single configuration simplifies circuit design and avoids complications that may arise from multiple transistor configurations.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation.

Package Shape: ROUND

Round package shape provides structural integrity and ease of mounting in various applications.

Terminal Form: SOLDER LUG

Solder lug terminals offer a secure and reliable connection in the circuit, reducing the risk of loose connections.

No. of Terminals: 2

Having 2 terminals simplifies circuit integration and reduces the complexity of wiring.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for easy and secure mounting on a surface, ensuring stability in the circuit.

Minimum DC Current Gain (hFE): 20

Higher minimum DC current gain ensures better amplification and control in switching operations.

Maximum Operating Temperature: 100 °C

High maximum operating temperature allows the transistor to withstand heat and operate efficiently in demanding conditions.

Maximum Collector-Emitter Voltage: 45 V

High maximum collector-emitter voltage rating allows the transistor to handle higher voltages without breakdown, ensuring safety and reliability.

Transistor Element Material: GERMANIUM

Germanium material offers low noise and high frequency performance, making this transistor suitable for sensitive applications.

Maximum Collector Current (IC): 25 A

High maximum collector current rating allows the transistor to handle high power levels, making it suitable for power switching applications.

Terminal Position: BOTTOM

Bottom terminal position allows for easy and convenient mounting in the circuit, ensuring a neat and organized layout.

Case Connection: COLLECTOR

Collector case connection simplifies circuit design and ensures efficient current flow in the transistor.

Nominal Transition Frequency (fT): 0.28 MHz

High nominal transition frequency allows for fast switching speeds and ensures smooth operation in high frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N512B attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

O-MBFM-D2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

GERMANIUM

Nominal Transition Frequency (fT):

Trade Compliance

2N512B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-044-2606, 5961000442606, 5961-12-148-0437, 5961121480437, 5961-99-526-1323, 5961995261323

NIIN

000442606, 121480437, 995261323

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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