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2N5191

Onsemi

2N5191 by Onsemi

The Onsemi 2N5191 is a NPN Power BJT with max. collector-emitter voltage of 60V and max. collector current of 4A. With a min. DC current gain of 10, it's ideal for switching applications at up to 140 °C operating temperature. The transistor comes in a plastic/epoxy package with flange mount style, suitable for through-hole mounting.

Median Price

$0.834

Lifecycle Status

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1k+

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DigiKey

USA . 956 parts In-Stock

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Adafruit Industries

USA . 18 parts In-Stock

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TEDSS.com

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Digiode

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Component Electronics Inc.

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American Microsemiconductor Inc.

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Bristol Electronics

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Whistler Technology

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Corohmni

South Africa . 336 parts In-Stock

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IDEA Electronic Components Group

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Component Stockers USA

USA . 1,292 parts In-Stock

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Corphita

USA . 4,349 parts In-Stock

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MKK Technologies

India . 445 parts In-Stock

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DigiPath Technology Company

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Advanced Electronics

New Zealand . 18 parts In-Stock

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Native Components

USA . 1,315 parts In-Stock

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Northwest PG Solutions

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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Problanco Electronics

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Parana Technologies

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TANS Electronics

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Alle Elektronik GmbH

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UHIMA Technologies

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RTC Component Inc.

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Overview

Enhance the performance of your electronic devices with the 2N5191 Power Bipolar Junction Transistor by Onsemi. Designed for switching applications, this NPN transistor offers a reliable solution with a maximum power dissipation of 40W and a maximum collector current of 4A. With a minimum DC current gain of 10, this transistor ensures efficient power management while maintaining high-quality standards. Ideal for a variety of applications, the 2N5191 provides exceptional value and benefits to customers seeking dependable and cost-effective solutions for their electronic projects. Trust Onsemi's reputation for excellence and choose the 2N5191 for all your transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in electronic designs.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making the transistor easy to use.

Transistor Application: SWITCHING

Suitable for switching applications, providing control over current flow in electronic circuits.

Maximum Power Dissipation (Abs): 40 W

High power dissipation capability allows the transistor to handle significant load without overheating.

Package Shape: RECTANGULAR

Rectangular shape offers easy mounting and integration into electronic circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections, ensuring stable performance.

Maximum Collector-Emitter Voltage: 60 V

With a high voltage rating, this transistor can handle higher voltages in electronic circuits.

Nominal Transition Frequency (fT): 2 MHz

High transition frequency allows for fast switching speeds in applications requiring rapid signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5191 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5191 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-00-491-0655, 5961004910655, 5961-14-308-4123, 5961143084123, 5961-99-548-4656, 5961995484656

NIIN

004910655, 143084123, 995484656

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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