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2N5190G

Onsemi

2N5190G by Onsemi

2N5190G by Onsemi is a NPN Power BJT with max. collector current of 4A, min. DC current gain of 10, and max. power dissipation of 40W. Ideal for switching applications due to its single configuration and high transition frequency of 2MHz.

Median Price

$0.556

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 418 parts In-Stock

1+ parts

$0.479

100+ parts

$0.479

1k+ parts

$0.479

10k+ parts

$0.479

418

$0.479

$0.479

$0.479

$0.479

Mouser Electronics

USA . 464 parts In-Stock

1+ parts

$1.280

100+ parts

$0.598

1k+ parts

$0.385

10k+ parts

$0.367

464

$1.280

$0.598

$0.385

$0.367

DigiKey

USA . 513 parts In-Stock

1+ parts

$1.400

100+ parts

$0.586

1k+ parts

$0.417

10k+ parts

$0.322

513

$1.400

$0.586

$0.417

$0.322

Master Electronics

USA . 500 parts In-Stock

1+ parts

-

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-

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$0.434

10k+ parts

$0.367

500

-

-

$0.434

$0.367

Verical

USA . 500 parts In-Stock

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-

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$0.633

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500

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$0.633

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Rochester

USA . 260 parts In-Stock

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-

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$0.436

1k+ parts

$0.362

10k+ parts

$0.323

260

-

$0.436

$0.362

$0.323

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 832 parts In-Stock

1+ parts

$0.323

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-

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832

$0.323

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Digiode

USA . 388 parts In-Stock

1+ parts

$0.338

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388

$0.338

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Flip Electronics

USA . 4,500 parts In-Stock

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4,500

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-

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IBS Electronics

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$0.519

1k+ parts

$0.484

10k+ parts

$0.456

500

-

$0.519

$0.484

$0.456

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,493 parts In-Stock

1+ parts

$0.320

100+ parts

-

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1,493

$0.320

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Corohmni

South Africa . 133 parts In-Stock

1+ parts

$0.346

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133

$0.346

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Benley Electronics

USA . 100 parts In-Stock

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$0.480

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100

$0.480

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Continental Prestige Electronics

USA . 508 parts In-Stock

1+ parts

$0.788

100+ parts

$0.495

1k+ parts

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508

$0.788

$0.495

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Native Components

USA . 162 parts In-Stock

1+ parts

$0.960

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162

$0.960

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Northwest PG Solutions

USA . 310 parts In-Stock

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$1.056

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310

$1.056

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Andel Nordic

Denmark . 158 parts In-Stock

1+ parts

$7.880

100+ parts

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$5.516

10k+ parts

$5.516

158

$7.880

-

$5.516

$5.516

Metaverse IC Inc.

Canada . 88,168 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,768 parts In-Stock

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5,768

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Perfect Parts

USA . 5,671 parts In-Stock

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Kulean Microsystems

USA . 5,589 parts In-Stock

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Problanco Electronics

Mexico . 4,598 parts In-Stock

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4,598

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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2,780

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TANS Electronics

Latvia . 2,099 parts In-Stock

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2,099

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SupplyDigital Components

Austria . 1,903 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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UHIMA Technologies

Türkiye . 145 parts In-Stock

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145

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Overview

Unleash the power of innovation with the Onsemi 2N5190G Power Bipolar Junction Transistor. Manufactured by the industry leader, Onsemi, this NPN transistor is perfect for a variety of switching applications. With a maximum power dissipation of 40W and a maximum collector current of 4A, this transistor offers unmatched performance and reliability. Say goodbye to inefficiency and hello to seamless operation with the Onsemi 2N5190G. Upgrade your projects today and experience the difference that quality craftsmanship can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and long-lasting.

Polarity or Channel Type: NPN

NPN transistors are commonly used in circuit designs, offering good performance in switching applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to integrate into new or existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor allows for efficient control of current flow.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement and secure mounting of the transistor within a circuit.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong connections and easy soldering for secure circuit assembly.

Maximum Power Dissipation (Abs): 40 W

With a high maximum power dissipation, this transistor can handle large loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount packaging offers stability and easy installation in a variety of electronic devices.

Minimum DC Current Gain (hFE): 10

A minimum current gain of 10 ensures reliable amplification of the input signal.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable performance even in hot environments.

Maximum Collector-Emitter Voltage: 40 V

With a maximum voltage rating of 40V, this transistor can handle a wide range of voltage levels in circuits.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material, ensuring stability and performance in the transistor.

Maximum Collector Current (IC): 4 A

This transistor can handle high collector currents, making it suitable for a variety of applications.

Terminal Finish: MATTE TIN

Matte tin finish on the terminals provides corrosion resistance and ensures good electrical conductivity.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and ensures easy integration into electronic systems.

Nominal Transition Frequency (fT): 2 MHz

The high nominal transition frequency allows for fast switching speeds and accurate signal processing in the transistor.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5190G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5190G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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