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2N511A

Texas Instruments

2N511A by Texas Instruments

2N511A by Texas Instruments is a PNP BJT transistor with hFE of 20, VCE of 40V, and IC of 25A. Ideal for switching applications due to its single configuration and germanium element material. Operates at up to 100°C with a flange mount style package for easy installation.

Median Price

$7.700

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 21 parts In-Stock

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$7.700

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$7.700

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Vyrian

USA . 7,992 parts In-Stock

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7,992

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Digiode

USA . 3,871 parts In-Stock

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3,871

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M&R Communications

USA . 114 parts In-Stock

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114

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Electronic Expediters

USA . 51 parts In-Stock

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51

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PUI

USA . 5 parts In-Stock

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5

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,768 parts In-Stock

1+ parts

$1.027

100+ parts

-

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$1.897

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1,768

$1.027

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$1.897

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ChromeModa Solutions

Germany . 5,880 parts In-Stock

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$1.154

100+ parts

$0.946

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5,880

$1.154

$0.946

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IDEA Electronic Components Group

UK . 1,273 parts In-Stock

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$1.154

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$1.039

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1,273

$1.154

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$1.039

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One Stop Electronics

USA . 491 parts In-Stock

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$10.050

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491

$10.050

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AZTECH Wire

Italy . 876 parts In-Stock

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$17.952

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876

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Native Components

USA . 798 parts In-Stock

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$129.990

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$124.790

798

$129.990

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$124.790

Northwest PG Solutions

USA . 834 parts In-Stock

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$142.989

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834

$142.989

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Glotronic Ltd.

UK . 2,900 parts In-Stock

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Corphita

USA . 2,585 parts In-Stock

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2,585

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DigiPath Technology Company

USA . 688 parts In-Stock

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$1.040

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$1.040

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Assy Fe

Spain . 23 parts In-Stock

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Overview

Unleash the power of the Texas Instruments 2N511A PNP Power Bipolar Junction Transistor! Engineered with precision and reliability in mind, this transistor is designed for high-performance switching applications. With a maximum collector-emitter voltage of 40V and a maximum collector current of 25A, this transistor delivers superior functionality and efficiency. Whether you're building a cutting-edge electronic device or upgrading an existing system, the 2N511A offers unmatched value and performance. Trust in Texas Instruments for quality you can count on.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal as the package body material provides durability and efficient heat dissipation, making this product reliable in high-power applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into existing circuits that require a PNP transistor, making this product versatile and compatible for a wide range of applications.

Configuration: SINGLE

The single configuration simplifies circuit design and ensures straightforward installation, making this product user-friendly and efficient.

Transistor Application: SWITCHING

Designed specifically for switching applications, this product offers fast switching speeds and low power consumption, making it ideal for efficient control of power levels.

Package Shape: ROUND

The round package shape allows for easy mounting and installation, making this product convenient and suitable for various design layouts.

No. of Terminals: 2

With only two terminals, this product is straightforward to connect and use in circuit designs, reducing complexity and potential points of failure.

Maximum Operating Temperature: 100 °C

With a high maximum operating temperature, this product can withstand elevated temperatures without compromising performance, ensuring reliability even in harsh environments.

Maximum Collector-Emitter Voltage: 40 V

The high maximum collector-emitter voltage rating allows for safe operation within specified limits, providing protection against voltage spikes and ensuring longevity of the product.

Maximum Collector Current (IC): 25 A

With a high maximum collector current rating, this product can handle large current loads, making it suitable for high-power applications that require efficient current control.

Nominal Transition Frequency (fT): 0.26 MHz

The high nominal transition frequency indicates fast switching speeds and efficient performance, making this product ideal for applications that require rapid signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N511A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

O-MBFM-D2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

GERMANIUM

Nominal Transition Frequency (fT):

Trade Compliance

2N511A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-007-5525, 5961010075525, 5961-14-236-3563, 5961142363563, 5961-00-954-7829, 5961009547829, 5961-15-053-2273, 5961150532273

NIIN

010075525, 142363563, 009547829, 150532273

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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