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2N5195G

Onsemi

2N5195G by Onsemi

2N5195G by Onsemi is a PNP BJT transistor with 80V VCEO, 4A IC, and 40W power dissipation. Ideal for switching applications due to its single configuration and 2MHz fT. The package style is flange mount with matte tin terminal finish.

Median Price

$0.409

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 2,217 parts In-Stock

1+ parts

$0.344

100+ parts

$0.317

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$0.304

10k+ parts

$0.297

2,217

$0.344

$0.317

$0.304

$0.297

Mouser Electronics

USA . 1,700 parts In-Stock

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$0.480

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1,700

$0.480

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Element14

Singapore . 2,217 parts In-Stock

1+ parts

$0.522

100+ parts

$0.492

1k+ parts

$0.473

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$0.470

2,217

$0.522

$0.492

$0.473

$0.470

Newark

USA . 2,697 parts In-Stock

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$0.593

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2,697

$0.593

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DigiKey

USA . 2,254 parts In-Stock

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$1.420

100+ parts

$0.596

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$0.424

10k+ parts

$0.328

2,254

$1.420

$0.596

$0.424

$0.328

Master Electronics

USA . 1,990 parts In-Stock

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$0.369

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$0.320

1,990

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$0.369

$0.320

Verical

USA . 1,950 parts In-Stock

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$0.351

1,950

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$0.351

Chip1Stop

Japan . 1,950 parts In-Stock

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$0.409

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1,950

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$0.409

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Arrow

USA . 1,500 parts In-Stock

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$0.384

1,500

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$0.384

Distributors (In-Stock)

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Vyrian

USA . 881 parts In-Stock

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$0.305

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881

$0.305

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TME

Poland . 290 parts In-Stock

1+ parts

$0.740

100+ parts

$0.563

1k+ parts

$0.498

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290

$0.740

$0.563

$0.498

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Digiode

USA . 2,435 parts In-Stock

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$0.799

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2,435

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IBS Electronics

USA . 3,559 parts In-Stock

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$0.722

1k+ parts

$0.645

10k+ parts

$0.638

3,559

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$0.722

$0.645

$0.638

Flip Electronics

USA . 1,000 parts In-Stock

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1,000

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NAC Semi

USA . 1,000 parts In-Stock

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$0.485

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1,000

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$0.485

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Cyclops Electronics Ltd

UK . 24 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 124 parts In-Stock

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$0.305

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124

$0.305

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Corphita

USA . 2,497 parts In-Stock

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$0.757

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2,497

$0.757

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Continental Prestige Electronics

USA . 7,313 parts In-Stock

1+ parts

$0.874

100+ parts

$0.536

1k+ parts

$0.327

10k+ parts

$0.307

7,313

$0.874

$0.536

$0.327

$0.307

Native Components

USA . 353 parts In-Stock

1+ parts

$6.791

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353

$6.791

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Metaverse IC Inc.

Canada . 86,168 parts In-Stock

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Perfect Parts

USA . 17,872 parts In-Stock

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Problanco Electronics

Mexico . 6,725 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,942 parts In-Stock

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Lixinc

USA . 5,863 parts In-Stock

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TANS Electronics

Latvia . 3,964 parts In-Stock

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Kepictronics

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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SupplyDigital Components

Austria . 1,914 parts In-Stock

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Kulean Microsystems

USA . 1,211 parts In-Stock

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UHIMA Technologies

Türkiye . 246 parts In-Stock

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246

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Assy Fe

Spain . 238 parts In-Stock

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238

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Northwest PG Solutions

USA . 149 parts In-Stock

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$6.655

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149

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$6.655

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Overview

Discover the power of the 2N5195G by Onsemi, a top-quality Power Bipolar Junction Transistor designed for efficient switching applications. Manufactured by Onsemi, a trusted industry leader, this PNP transistor offers unparalleled reliability and performance. With a maximum collector current of 4A and a nominal transition frequency of 2MHz, this transistor is perfect for a wide range of electronic projects. Experience the value and benefits of the 2N5195G by Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package robust and resistant to environmental factors, ensuring durability and reliability.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power applications and can handle large currents, making them suitable for switching applications.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making the transistor easier to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers quick response times and efficient switching capabilities.

Maximum Power Dissipation (Abs): 40 W

With a high power dissipation capacity of 40 W, this transistor can handle high power loads without overheating, ensuring optimal performance.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides a secure and stable connection, reducing the risk of disconnection or signal loss in the circuit.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments and operate reliably under varying conditions.

Nominal Transition Frequency (fT): 2 MHz

The high nominal transition frequency of 2 MHz enables fast switching speeds and efficient performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5195G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

7

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5195G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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