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2N512

Texas Instruments

2N512 by Texas Instruments

2N512 by Texas Instruments is a PNP BJT transistor with hFE of 20, VCE of 30V, and IC of 25A. Ideal for switching applications due to its single configuration and germanium element material. Operates at up to 100°C with a transition frequency of 0.28 MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,044 parts In-Stock

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3,044

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Vyrian

USA . 2,364 parts In-Stock

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2,364

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Electronics Depot

USA . 10 parts In-Stock

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10

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Distributors (Availability)

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Parana Technologies

USA . 876 parts In-Stock

1+ parts

$1.468

100+ parts

-

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$2.151

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876

$1.468

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$2.151

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DigiPath Technology Company

USA . 2,076 parts In-Stock

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$1.616

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$1.487

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2,076

$1.616

$1.487

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ChromeModa Solutions

Germany . 5,054 parts In-Stock

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$1.649

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$1.352

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5,054

$1.649

$1.352

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IDEA Electronic Components Group

UK . 1,584 parts In-Stock

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$1.649

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$1.484

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1,584

$1.649

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$1.484

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Native Components

USA . 171 parts In-Stock

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$7.175

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171

$7.175

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AZTECH Wire

Italy . 845 parts In-Stock

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$13.477

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845

$13.477

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One Stop Electronics

USA . 304 parts In-Stock

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$42.050

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304

$42.050

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Corphita

USA . 3,317 parts In-Stock

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Northwest PG Solutions

USA . 976 parts In-Stock

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$7.032

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976

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$7.032

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Overview

Experience the ultimate power and reliability with the 2N512 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch quality with this PNP Power Bipolar Junction Transistor. Ideal for switching applications, this transistor offers superior performance and efficiency. With a maximum collector current of 25A and a collector-emitter voltage of 30V, the 2N512 provides unmatched value and benefits to customers looking for high-quality components. Trust Texas Instruments to deliver excellence in every product.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides durability and helps in heat dissipation, making the transistor suitable for high power applications.

Polarity or Channel Type: PNP

PNP transistors allow for high-speed switching and are commonly used in power electronics applications.

Configuration: SINGLE

Single configuration simplifies circuit design and saves space, making it suitable for compact electronic devices.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and high efficiency.

Package Shape: ROUND

Round package shape enables easy mounting and soldering, making it convenient for assembly.

Terminal Form: SOLDER LUG

Solder lug terminals provide a secure connection and ease of soldering onto a circuit board.

No. of Terminals: 2

With 2 terminals, this transistor is easy to integrate into circuits and simplifies the overall design.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for secure mounting on a surface, ensuring stability in various applications.

Minimum DC Current Gain (hFE): 20

The minimum DC current gain of 20 ensures reliable and consistent performance in amplification and switching circuits.

Maximum Operating Temperature: 100 °C

With a maximum operating temperature of 100°C, this transistor can withstand high temperatures in demanding environments.

Maximum Collector-Emitter Voltage: 30 V

The maximum collector-emitter voltage of 30V allows for safe operation in high voltage circuits.

Transistor Element Material: GERMANIUM

Germanium material offers low noise characteristics and high sensitivity, making it ideal for high-frequency applications.

Maximum Collector Current (IC): 25 A

The maximum collector current of 25A allows for high power handling capability in various electronic circuits.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy soldering and connection to external circuits, enhancing overall usability.

Case Connection: COLLECTOR

Case connection at the collector provides a direct and efficient path for current flow, ensuring optimal performance.

Nominal Transition Frequency (fT): 0.28 MHz

The nominal transition frequency of 0.28 MHz indicates the maximum frequency at which the transistor can operate, suitable for various high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N512 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

O-MBFM-D2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

GERMANIUM

Nominal Transition Frequency (fT):

Trade Compliance

2N512 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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