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2N511

Texas Instruments

2N511 by Texas Instruments

2N511 by Texas Instruments is a PNP BJT transistor with max. 30V VCE, 25A IC, and hFE of 20. Ideal for switching applications due to its single configuration and Germanium element material. Package style: Flange mount with solder lug terminals for easy installation.

Median Price

$8.690

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 14 parts In-Stock

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$8.690

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Vyrian

USA . 5,029 parts In-Stock

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Digiode

USA . 2,161 parts In-Stock

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Electronic Expediters

USA . 43 parts In-Stock

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ECAB

Sweden . 35 parts In-Stock

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PUI

USA . 15 parts In-Stock

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Resion

USA . 12 parts In-Stock

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LWI Electronics Inc

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Parana Technologies

USA . 1,112 parts In-Stock

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$0.845

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$1.802

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$0.845

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IDEA Electronic Components Group

UK . 751 parts In-Stock

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$0.949

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$0.854

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751

$0.949

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ChromeModa Solutions

Germany . 154 parts In-Stock

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$0.949

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$0.778

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One Stop Electronics

USA . 497 parts In-Stock

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$2.050

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AZTECH Wire

Italy . 544 parts In-Stock

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$15.671

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Corphita

USA . 4,711 parts In-Stock

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DigiPath Technology Company

USA . 2,356 parts In-Stock

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$0.856

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Northwest PG Solutions

USA . 1,032 parts In-Stock

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Native Components

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RTC Component Inc.

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Overview

Looking for a reliable power Bipolar Junction Transistor (BJT) for your switching applications? Look no further than the 2N511 by Texas Instruments. With a maximum collector-emitter voltage of 30V and a maximum collector current of 25A, this PNP transistor offers high performance and durability. Its Germanium element material ensures quality, while its flange mount package style makes it easy to integrate into your designs. Trust in Texas Instruments' reputation for excellence and choose the 2N511 for all your switching needs.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides durability and helps in efficient heat dissipation, ensuring reliability and long lifespan of the transistor.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power switching applications, making this product suitable for such requirements.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate the transistor into various electronic systems.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can handle rapid changes in current with high efficiency and speed.

Package Shape: ROUND

Round package shape allows for easy mounting and installation, making it versatile for a range of applications.

Terminal Form: SOLDER LUG

Solder lug terminals ensure secure and stable connections, enhancing the overall performance and reliability of the transistor.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the chances of errors during installation.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides mechanical stability and easy mounting options, making it convenient for various assembly requirements.

Minimum DC Current Gain (hFE): 20

With a minimum DC current gain of 20, this transistor offers consistent and reliable amplification of current signals.

Maximum Operating Temperature: 100 °C

High maximum operating temperature of 100°C allows the transistor to function efficiently in a wide range of environments and conditions.

Maximum Collector-Emitter Voltage: 30 V

The high maximum collector-emitter voltage rating of 30V ensures the transistor can handle a wide range of voltage levels without failure.

Transistor Element Material: GERMANIUM

Germanium material offers low noise performance and high sensitivity, making this transistor suitable for low-power applications where accuracy is critical.

Maximum Collector Current (IC): 25 A

With a maximum collector current rating of 25A, this transistor can handle high power loads without overheating or failure.

Terminal Position: BOTTOM

Bottom terminal position simplifies the PCB layout and facilitates easy soldering, enhancing the overall ease of use and installation.

Case Connection: COLLECTOR

Collector case connection allows for efficient heat dissipation and helps in maintaining the temperature within safe operating limits.

Nominal Transition Frequency (fT): 0.26 MHz

With a nominal transition frequency of 0.26MHz, this transistor offers fast switching speeds and high-frequency performance, ideal for applications requiring rapid signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N511 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

O-MBFM-D2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

GERMANIUM

Nominal Transition Frequency (fT):

Trade Compliance

2N511 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-828-0755, 5961008280755, 5961-00-838-9600, 5961008389600, 5961-15-053-2274, 5961150532274, 5961-99-118-2577, 5961991182577

NIIN

008280755, 008389600, 150532274, 991182577

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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