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2N511B

Texas Instruments

2N511B by Texas Instruments

2N511B by Texas Instruments is a PNP BJT transistor with hFE of 20, VCE of 45V, and IC of 25A. Primarily used for switching applications due to its single configuration and germanium element material. Operates at temperatures up to 100°C in a round package with solder lug terminals.

Median Price

$8.960

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 81 parts In-Stock

1+ parts

$0.449

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81

$0.449

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Bristol Electronics

USA . 6 parts In-Stock

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$8.960

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6

$8.960

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American Microsemiconductor Inc.

USA . 491 parts In-Stock

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$9.610

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491

$9.610

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Vyrian

USA . 2,099 parts In-Stock

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2,099

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Digiode

USA . 1,867 parts In-Stock

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DF Sales Co.

USA . 74 parts In-Stock

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74

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DF Sales Co.

USA . 74 parts In-Stock

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74

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PUI

USA . 40 parts In-Stock

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40

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Corel Iberica Componentes, S.L.

Spain . 27 parts In-Stock

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27

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ICP Electronique

France . 12 parts In-Stock

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ECAB

Sweden . 9 parts In-Stock

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Resion

USA . 9 parts In-Stock

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Tech-Mark Corp

USA . 7 parts In-Stock

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Prism Electronics

USA . 2 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 1,193 parts In-Stock

1+ parts

$0.530

100+ parts

$49.177

1k+ parts

$0.477

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1,193

$0.530

$49.177

$0.477

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DigiPath Technology Company

USA . 1,910 parts In-Stock

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$0.583

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1,910

$0.583

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IDEA Electronic Components Group

UK . 1,396 parts In-Stock

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$0.595

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$0.536

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1,396

$0.595

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$0.536

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ChromeModa Solutions

Germany . 824 parts In-Stock

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$0.595

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$0.488

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824

$0.595

$0.488

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AZTECH Wire

Italy . 791 parts In-Stock

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$11.421

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791

$11.421

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Native Components

USA . 556 parts In-Stock

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$33.800

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$32.448

556

$33.800

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$32.448

Northwest PG Solutions

USA . 749 parts In-Stock

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$37.180

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749

$37.180

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One Stop Electronics

USA . 995 parts In-Stock

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$46.050

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995

$46.050

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Corphita

USA . 1,754 parts In-Stock

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Assy Fe

Spain . 27 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1 parts In-Stock

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Overview

Unlock the power of seamless switching with the Texas Instruments 2N511B Power Bipolar Junction Transistor. Crafted with precision and expertise, this PNP transistor offers reliability and efficiency like no other. Ideal for a wide range of applications, from industrial machinery to automotive systems, this transistor boasts a maximum collector-emitter voltage of 45V and a maximum collector current of 25A. Say goodbye to subpar performance and hello to optimal functionality with the 2N511B - your ultimate solution for all your switching needs.

Feature Benefit Bullets

Package Body Material: METAL

Provides durability and heat dissipation, making the product suitable for high-power applications.

Polarity or Channel Type: PNP

Enables the transistor to operate in applications requiring PNP transistors.

Configuration: SINGLE

Simplifies circuit design by using a single transistor in the configuration.

Transistor Application: SWITCHING

Optimized for switching applications, enhancing efficiency and performance.

Package Shape: ROUND

Facilitates easy mounting and connection in various electronic circuits.

Terminal Form: SOLDER LUG

Allows for secure and reliable soldering connections for stable operation.

No. of Terminals: 2

Simplifies circuit connections and reduces complexity in circuit design.

Package Style (Meter): FLANGE MOUNT

Enables easy mounting on circuit boards or heat sinks for efficient heat dissipation.

Minimum DC Current Gain (hFE): 20

Ensures reliable amplification and switching performance in various applications.

Maximum Operating Temperature: 100 °C

Capable of operating in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 45 V

Suitable for applications requiring up to 45V collector-emitter voltage.

Transistor Element Material: GERMANIUM

Provides unique electrical properties for specific applications, offering versatility.

Maximum Collector Current (IC): 25 A

Supports high current applications with a maximum collector current of 25A.

Terminal Position: BOTTOM

Facilitates easy PCB layout and connections with bottom terminal positioning.

Case Connection: COLLECTOR

Enables efficient current flow and heat dissipation through the collector connection.

Nominal Transition Frequency (fT): 0.26 MHz

Indicates the frequency response range of the transistor, suitable for certain applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N511B attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

O-MBFM-D2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

GERMANIUM

Nominal Transition Frequency (fT):

Trade Compliance

2N511B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-481-1443, 5961004811443, 5961-00-822-8835, 5961008228835, 5961-15-053-2272, 5961150532272

NIIN

004811443, 008228835, 150532272

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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