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2N5194G

Onsemi

2N5194G by Onsemi

The Onsemi 2N5194G is a PNP power BJT with max. collector-emitter voltage of 60V and max. collector current of 4A. It has a min. DC current gain of 10, making it suitable for switching applications with a max. power dissipation of 40W in a rectangular package style for through-hole mounting.

Median Price

$0.317

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 89 parts In-Stock

1+ parts

-

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$0.317

1k+ parts

$0.263

10k+ parts

$0.235

89

-

$0.317

$0.263

$0.235

Distributors (In-Stock)

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Digiode

USA . 1,619 parts In-Stock

1+ parts

$0.247

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-

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1,619

$0.247

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Vyrian

USA . 7,867 parts In-Stock

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7,867

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Distributors (Availability)

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Ampacity Inc.

Singapore . 89 parts In-Stock

1+ parts

$0.221

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-

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89

$0.221

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Corphita

USA . 2,119 parts In-Stock

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$0.234

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2,119

$0.234

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Corohmni

South Africa . 52 parts In-Stock

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$0.260

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52

$0.260

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Native Components

USA . 360 parts In-Stock

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$8.520

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360

$8.520

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Northwest PG Solutions

USA . 461 parts In-Stock

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$9.372

100+ parts

$8.435

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461

$9.372

$8.435

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AZTECH Wire

Italy . 228 parts In-Stock

1+ parts

$16.860

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228

$16.860

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Component Stockers USA

USA . 654 parts In-Stock

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$99.990

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654

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 27,693 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,447 parts In-Stock

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Perfect Parts

USA . 4,530 parts In-Stock

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TANS Electronics

Latvia . 3,334 parts In-Stock

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Problanco Electronics

Mexico . 2,995 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Kepictronics

USA . 990 parts In-Stock

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990

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Kulean Microsystems

USA . 905 parts In-Stock

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905

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SupplyDigital Components

Austria . 147 parts In-Stock

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UHIMA Technologies

Türkiye . 36 parts In-Stock

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36

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Overview

Looking for a reliable and high-quality Power Bipolar Junction Transistor? Look no further than the Onsemi 2N5194G! Manufactured by industry leader Onsemi, this PNP transistor is ideal for switching applications, offering a maximum power dissipation of 40W and a maximum collector-emitter voltage of 60V. With a minimum DC current gain of 10 and a peak reflow temperature of 260 °C, this transistor provides exceptional performance and reliability. Trust Onsemi for all your electronic component needs and experience the value and benefits that the 2N5194G has to offer!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and longevity.

Polarity or Channel Type: PNP

Suitable for complementary circuits and switching applications.

Configuration: SINGLE

Simplifies circuit design and integration.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance.

Package Shape: RECTANGULAR

Easy to mount and integrate into various systems.

Terminal Form: THROUGH-HOLE

Allows for easy soldering and secure connections.

Maximum Power Dissipation (Abs): 40 W

Can handle high power levels, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Provides stability and ease of mounting.

Minimum DC Current Gain (hFE): 10

Ensures consistent and reliable performance in amplification applications.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 60 V

Can handle moderate voltage levels, suitable for a variety of applications.

Transistor Element Material: SILICON

Provides improved performance and efficiency compared to other materials.

Maximum Collector Current (IC): 4 A

Can handle high current levels, suitable for power applications.

Terminal Finish: Tin (Sn)

Provides good conductivity and corrosion resistance for reliable connections.

Terminal Position: SINGLE

Simplifies circuit design and wiring.

Peak Reflow Temperature °C: 260

Can withstand high-temperature reflow soldering processes.

Nominal Transition Frequency (fT): 2 MHz

Suitable for high-frequency applications such as RF amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5194G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5194G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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