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2N514B

Texas Instruments

2N514B by Texas Instruments

2N514B by Texas Instruments is a PNP Power BJT with max power dissipation of 80W, hFE of 25, and max operating temp of 100°C. Ideal for high-power applications requiring a single configuration transistor with a max collector-emitter voltage of 80V and max collector current of 25A.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,917 parts In-Stock

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1,917

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Digiode

USA . 1,514 parts In-Stock

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1,514

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Resion

USA . 5 parts In-Stock

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5

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Electronic Expediters

USA . 4 parts In-Stock

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,289 parts In-Stock

1+ parts

$0.490

100+ parts

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$1.621

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1,289

$0.490

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$1.621

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DigiPath Technology Company

USA . 1,111 parts In-Stock

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$0.540

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$0.497

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$0.540

$0.497

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ChromeModa Solutions

Germany . 3,944 parts In-Stock

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$0.551

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$0.452

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3,944

$0.551

$0.452

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IDEA Electronic Components Group

UK . 626 parts In-Stock

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$0.551

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$0.496

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626

$0.551

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Native Components

USA . 885 parts In-Stock

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$0.672

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885

$0.672

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Northwest PG Solutions

USA . 2,328 parts In-Stock

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$0.739

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$0.739

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AZTECH Wire

Italy . 270 parts In-Stock

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$12.220

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One Stop Electronics

USA . 1,629 parts In-Stock

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$44.050

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Corphita

USA . 2,530 parts In-Stock

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Fulton Briggs Corp.

USA . 1,357 parts In-Stock

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Overview

Unlock new possibilities with the Texas Instruments 2N514B Power Bipolar Junction Transistor. With a reputation for excellence in manufacturing, Texas Instruments delivers top-notch quality and reliability. Ideal for a variety of applications, this PNP transistor offers customers unmatched value and performance. Experience improved efficiency and power management with the 2N514B, making it the perfect choice for your next project. Elevate your designs with Texas Instruments today!

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are suitable for applications where the current needs to flow from collector to emitter which is common in many circuit designs.

Maximum Power Dissipation (Abs): 80 W

High power dissipation allows this transistor to handle large amounts of power without overheating, making it reliable for demanding applications.

Minimum DC Current Gain (hFE): 25

A higher DC current gain ensures amplification of input signals with high accuracy and efficiency in various electronic circuits.

Maximum Operating Temperature: 100 °C

With a high maximum operating temperature, this transistor can withstand harsh environmental conditions and maintain performance under elevated temperatures.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating makes this transistor suitable for circuits requiring higher voltage levels, offering flexibility in circuit design.

Transistor Element Material: GERMANIUM

Germanium transistors have low forward voltage drop and can operate efficiently at lower temperatures, making them ideal for certain specialized applications.

Maximum Collector Current (IC): 25 A

A high collector current rating allows this transistor to handle high current loads, making it suitable for power amplification and switching applications.

Nominal Transition Frequency (fT): 0.43 MHz

The high transition frequency enables this transistor to provide fast response and high-speed switching capabilities, making it ideal for applications requiring quick switching transitions.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N514B attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

25

No. of Elements:

1

Maximum Operating Temperature:

100 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Transistor Element Material:

GERMANIUM

Nominal Transition Frequency (fT):

Trade Compliance

2N514B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-724-2781, 5961007242781

NIIN

007242781

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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