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2N512A

Texas Instruments

2N512A by Texas Instruments

2N512A by Texas Instruments is a PNP BJT transistor with max. collector-emitter voltage of 40V and max. collector current of 25A. Ideal for switching applications, it has a min DC current gain of 20 and operates up to 100°C. Its package style is flange mount with a round shape and solder lug terminals.

Median Price

$7.590

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 1 parts In-Stock

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$7.590

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$7.590

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Vyrian

USA . 6,396 parts In-Stock

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6,396

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Digiode

USA . 2,238 parts In-Stock

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2,238

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Electronic Expediters

USA . 4 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 995 parts In-Stock

1+ parts

$0.486

100+ parts

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$0.467

995

$0.486

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$0.467

Northwest PG Solutions

USA . 1,903 parts In-Stock

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$0.535

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$0.472

1,903

$0.535

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$0.472

Parana Technologies

USA . 1,792 parts In-Stock

1+ parts

$1.677

100+ parts

$155.713

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$1.509

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1,792

$1.677

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$1.509

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DigiPath Technology Company

USA . 1,046 parts In-Stock

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$1.846

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$1.699

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1,046

$1.846

$1.699

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ChromeModa Solutions

Germany . 2,232 parts In-Stock

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$1.884

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$1.545

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2,232

$1.884

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IDEA Electronic Components Group

UK . 1,308 parts In-Stock

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$1.884

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$1.696

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1,308

$1.884

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AZTECH Wire

Italy . 889 parts In-Stock

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$9.286

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$9.286

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One Stop Electronics

USA . 1,239 parts In-Stock

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$54.050

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Corphita

USA . 1,044 parts In-Stock

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Overview

Upgrade your electronics with the Texas Instruments 2N512A Power Bipolar Junction Transistor. Manufactured by the industry leader, Texas Instruments, this PNP transistor is designed for switching applications, offering reliable performance and durability. With a maximum collector-emitter voltage of 40V and a maximum collector current of 25A, this transistor is perfect for a variety of power applications. Trust in Texas Instruments to deliver high-quality components that meet your needs.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body offers durability and heat dissipation, making the transistor suitable for high power applications.

Polarity or Channel Type: PNP

PNP type transistors are useful for applications requiring a negative ground, allowing for versatile circuit design.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making the transistor easy to use in various applications.

Transistor Application: SWITCHING

Switching application makes the transistor suitable for controlling heavy loads and power management tasks.

Package Shape: ROUND

Round package shape offers compactness and ease of mounting, especially in space-constrained environments.

Terminal Form: SOLDER LUG

Solder lug terminals provide secure and reliable connections, ensuring stable performance in different operating conditions.

No. of Terminals: 2

2 terminals simplify the circuit connection, reducing complexity and enabling quick assembly.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers easy installation and maintenance, making it convenient for various industrial applications.

Minimum DC Current Gain (hFE): 20

Minimum DC current gain of 20 ensures stable amplification and performance in different operating conditions.

Maximum Operating Temperature: 100 °C

High maximum operating temperature of 100°C allows the transistor to operate reliably even in high-temperature environments.

Maximum Collector-Emitter Voltage: 40 V

High maximum collector-emitter voltage of 40 volts enables the transistor to handle higher voltage levels, increasing its versatility.

Transistor Element Material: GERMANIUM

Germanium material offers superior performance in low-power applications, making the transistor an efficient choice for specific requirements.

Maximum Collector Current (IC): 25 A

High maximum collector current of 25 amps allows the transistor to handle heavy loads and power levels, suitable for demanding applications.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy circuit board layout and connection, enhancing the user's convenience during installation.

Case Connection: COLLECTOR

Collector case connection ensures efficient heat dissipation and helps in maintaining proper thermal management for optimal performance.

Nominal Transition Frequency (fT): 0.28 MHz

Nominal transition frequency of 0.28 MHz indicates the transistor's capability to operate at high speeds, making it suitable for fast-switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N512A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

O-MBFM-D2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

GERMANIUM

Nominal Transition Frequency (fT):

Trade Compliance

2N512A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-973-8701, 5961009738701

NIIN

009738701

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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